CY7C1019CV33-12BVXI 1Mb SRAM Memory IC ?C High-Speed CMOS ?C 32-Pin PLCC Package

CY7C1019CV33-12BVXI Overview

The CY7C1019CV33-12BVXI is a high-speed 1 Megabit (128K x 8) static RAM designed for advanced memory applications requiring fast access and reliable data storage. Operating at a 3.3V power supply, this device supports a 12 ns access time, making it suitable for performance-critical embedded systems and buffer memory roles. Its low power consumption combined with a compact 32-pin JEDEC-standard SOJ package ensures easy integration into space-constrained designs. Engineers and sourcing specialists benefit from its robust architecture and compatibility in a variety of industrial and commercial electronics applications. For detailed product sourcing and technical support, visit IC Manufacturer.

CY7C1019CV33-12BVXI Technical Specifications

CY7C1019CV33-12BVXI Key Features

• Fast 12 ns access time: Enables rapid read/write cycles, improving system throughput in time-sensitive applications.
• Low-voltage 3.3V operation: Reduces overall power consumption, ideal for energy-efficient and battery-powered designs.
• Standard 32-pin SOJ package: Facilitates straightforward PCB layout and compatibility with industry-standard sockets and footprints.
• Data retention at 2.0V minimum: Maintains stored data integrity during power fluctuations or standby conditions.
• Commercial temperature range: Ensures reliable operation in typical ambient conditions encountered in industrial and consumer electronics.
• Low standby current: Supports energy-saving modes, extending device lifespan and reducing thermal stress.
• JEDEC-standard pinout and functionality: Simplifies design reuse and interoperability with existing memory architectures.

CY7C1019CV33-12BVXI Advantages vs Typical Alternatives

This SRAM device offers a significant advantage over typical alternatives through its combination of 12 ns fast access time and low 3.3V power operation. Its compact SOJ package enhances integration flexibility while maintaining data integrity with low standby current and data retention voltage. These features contribute to improved reliability, power efficiency, and ease of board-level implementation in comparison to standard 5V SRAMs or slower memory devices.

Typical Applications

• High-speed buffer memory in networking equipment, where fast data access and low latency are crucial for packet processing and throughput.
• Embedded system memory for microcontrollers requiring fast and reliable volatile storage with low power dissipation.
• Cache memory in digital signal processing (DSP) systems, enhancing real-time data access and computational efficiency.
• Temporary data storage in industrial control systems, supporting rapid read/write cycles in automation and measurement devices.

CY7C1019CV33-12BVXI Brand Info

This product is part of the CY7C1019 series, a well-established family of static RAMs widely recognized for performance and reliability in industrial and commercial applications. Manufactured under stringent quality standards, this memory device aligns with JEDEC specifications, ensuring compatibility and ease of integration. The brand backing this SRAM supports comprehensive technical documentation and supply chain continuity, making it a preferred choice for engineers and sourcing specialists focused on durable and high-performance memory solutions.

FAQ

What is the primary use case for this 1 Megabit SRAM?

This SRAM is primarily used for applications requiring fast and reliable volatile memory, such as buffer storage, cache memory, or embedded system