CY7C1019BV33-12ZC 1M x 8 SRAM Memory IC – 32-Pin PLCC Package

CY7C1019BV33-12ZC Overview

The CY7C1019BV33-12ZC is a high-performance, low-power static RAM (SRAM) designed for fast, reliable memory storage in embedded and industrial applications. Operating at a 3.3V supply voltage with a 12 ns access time, this 1 Megabit (128K x 8) CMOS SRAM device supports byte write capability and features a TTL-compatible interface. Its robust design ensures efficient data retention and fast access, making it suitable for buffering, caching, and temporary data storage in systems requiring quick memory response. The CY7C1019BV33-12ZC offers engineers a compact and stable memory solution from a trusted IC Manufacturer.

CY7C1019BV33-12ZC Technical Specifications

CY7C1019BV33-12ZC Key Features

• 12 ns Fast Access Time: Enables rapid data retrieval and storage, essential for high-speed computing and embedded systems requiring minimal latency.
• Low Voltage Operation at 3.3 V: Reduces power consumption while maintaining compatibility with modern low-voltage digital systems.
• Byte Write Capability: Allows selective writing to either the upper or lower byte, improving memory management efficiency and reducing unnecessary data overwrites.
• TTL-Compatible Inputs and Outputs: Facilitates easy integration with standard logic circuits without additional level shifting.
• Power-Efficient Standby Mode: Minimizes power drain during idle periods, enhancing system reliability and extending battery life in portable devices.
• Wide Operating Temperature Range: Supports 0??C to +70??C operation, suitable for industrial and commercial environments.
• Compact 44-Pin TSOP Package: Saves board space and simplifies layout design in dense circuit assemblies.

CY7C1019BV33-12ZC Advantages vs Typical Alternatives

This SRAM device stands out with its combination of fast 12 ns access time and low 3.3 V power operation, providing engineers with a high-speed memory option that consumes less power than traditional 5 V SRAMs. Its byte write feature enhances flexibility compared to alternatives lacking selective write capabilities. Additionally, the compact TSOP package and TTL-compatible interface simplify integration, making it a reliable and efficient choice for applications prioritizing speed, power efficiency, and ease of use.

Typical Applications

• High-speed buffering and caching in embedded systems where quick data access is critical to overall system performance.
• Temporary data storage in communication devices requiring fast read/write cycles with low power consumption.
• Memory expansion in industrial control systems operating within commercial temperature ranges.
• Data retention and scratchpad memory in portable electronics and consumer devices benefiting from low voltage operation and compact packaging.

CY7C1019BV33-12ZC Brand Info

The CY7C1019BV33-12ZC is part of a reputable line of SRAM products manufactured by a leading semiconductor company known for delivering high-quality memory solutions. This device exemplifies the brand??s commitment to innovation and reliability, combining advanced CMOS technology with robust design principles. Trusted by engineers worldwide, it supports a broad range of applications across industrial, communications, and embedded markets, offering consistent performance and long-term availability.

FAQ

What is the supply voltage requirement for the CY7C1019BV33-12ZC?

The device operates at a nominal