CY7C1019BV33-12VI Overview
The CY7C1019BV33-12VI is a high-performance 1M x 8-bit static RAM device designed for fast, reliable data storage in industrial and embedded systems. Operating at a 12 ns access time with a 3.3 V power supply, it offers low power consumption and high-speed operation suitable for memory-intensive applications. This CMOS SRAM integrates advanced control logic to simplify system design and enhance data integrity. Its compact 28-pin SOJ package enables easy board-level integration. For more detailed product support and supply information, visit the IC Manufacturer website.
CY7C1019BV33-12VI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 1,048,576 words ?? 8 bits |
| Access Time | 12 ns |
| Operating Voltage | 3.3 V ?? 0.3 V |
| Package Type | 28-pin Small Outline J-Lead (SOJ) |
| Data Retention Voltage | 2.0 V (typical) |
| Operating Temperature Range | 0??C to +70??C (Commercial) |
| Standby Current | 10 ??A (typical) |
| Power Consumption (Active) | 75 mW (typical) |
CY7C1019BV33-12VI Key Features
- High-speed 12 ns access time: Enables rapid data retrieval, improving overall system throughput in time-critical applications.
- Low voltage operation at 3.3 V: Reduces power consumption and heat generation, supporting energy-efficient designs.
- Single 3.3 V power supply: Simplifies power management and reduces external component count in system design.
- Low standby current: Enhances energy efficiency during idle periods, extending device and system longevity.
- Standard 28-pin SOJ package: Facilitates easy PCB integration and supports high-density board layouts.
- Static RAM architecture: Eliminates the need for refresh cycles, ensuring stable and reliable data storage.
- Wide operating temperature range: Suitable for commercial temperature environments, ensuring consistent performance.
CY7C1019BV33-12VI Advantages vs Typical Alternatives
The device offers a compelling balance of speed, power efficiency, and integration compared to typical SRAM alternatives. Its 12 ns access time supports faster data processing than many legacy 3.3 V SRAMs, while the low standby current reduces operational costs in battery-powered or energy-sensitive systems. The single 3.3 V supply simplifies power design and minimizes external components, enhancing overall system reliability and reducing footprint.
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Typical Applications
- Embedded system memory: Ideal for buffering and temporary data storage in microcontroller-based industrial control, communication, or instrumentation systems requiring fast and reliable SRAM.
- Cache memory: Used as high-speed cache memory in data acquisition and processing units where rapid access to intermediate data is critical.
- Networking equipment: Supports packet buffering and fast data handling in routers, switches, and other network devices operating at 3.3 V logic levels.
- Consumer electronics: Suitable for applications requiring low power consumption and compact memory solutions, such as portable devices and handheld instrumentation.
CY7C1019BV33-12VI Brand Info
This SRAM is part of the CY7C1019BV33 family, manufactured by a leading semiconductor supplier known for reliable CMOS memory products. The product line emphasizes high-speed performance, low voltage operation, and dependable data retention. Designed for industrial and commercial applications, it meets stringent quality and reliability standards, ensuring robust operation across various demanding environments.
FAQ
What is the operating voltage range for this SRAM device?
The device operates at a nominal voltage of 3.3 V with a tolerance of ??0.3 V. This 3.3 V single power supply simplifies system power design and ensures compatibility with modern low
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