CY7C1019BV33-10VC 1M x 8 SRAM Memory IC, 44-Pin PLCC Package

  • This device provides fast and efficient static RAM storage, enabling quick data access for computing tasks.
  • Operating at a high speed grade supports performance-critical applications requiring rapid memory response times.
  • The compact DIP package offers board-space savings, facilitating integration into designs with limited physical area.
  • Ideal for use in embedded systems where reliable temporary data storage enhances overall system performance.
  • Manufactured to meet industry standards, ensuring consistent operation and long-term reliability in various environments.
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CY7C1019BV33-10VC Overview

The CY7C1019BV33-10VC is a high-performance static RAM (SRAM) device optimized for fast access and low power consumption in industrial and commercial applications. Offering a 32K x 8-bit memory configuration with a 10 ns access time, this SRAM supports a 3.3 V power supply, making it suitable for modern low-voltage systems. Its asynchronous architecture ensures ease of integration with various microprocessors and controllers. The device is designed for reliable data storage with static operation that does not require refreshing, ensuring stability in critical memory functions. Visit IC Manufacturer for more detailed product information and support.

CY7C1019BV33-10VC Technical Specifications

ParameterSpecification
Memory Organization32K x 8 bits
Access Time10 ns
Supply Voltage (Vcc)3.3 V ?? 0.3 V
Operating Temperature Range0??C to +70??C
Standby Current10 ??A (typical)
Operating Current30 mA (typical)
Package Type44-pin PLCC
Data Retention Voltage2.0 V (minimum)
Input/Output Voltage0 V to Vcc
Access MethodAsynchronous

CY7C1019BV33-10VC Key Features

  • Fast 10 ns access time: Enables quick data retrieval and writing, optimizing system performance in high-speed applications.
  • Low power consumption: Operating and standby currents are minimized to extend system battery life and reduce thermal load.
  • Asynchronous SRAM architecture: Simplifies interface design by eliminating the need for clock synchronization, easing integration with various microcontrollers.
  • 3.3 V power supply compatibility: Supports modern low-voltage systems, reducing power usage and improving energy efficiency.
  • Wide operating temperature range: Ensures reliable performance in industrial environments ranging from 0??C to 70??C.
  • 44-pin PLCC package: Offers a compact footprint with robust mechanical stability for PCB mounting.
  • Non-volatile data retention at low voltage: Maintains stored data integrity during power-down states with a minimum of 2.0 V data retention voltage.

CY7C1019BV33-10VC Advantages vs Typical Alternatives

This SRAM device provides a superior balance of speed, power efficiency, and voltage compatibility compared to standard asynchronous memories. Its fast 10 ns access time combined with low standby and operating currents ensures both high system throughput and energy savings. The 3.3 V operation aligns with modern low-voltage platforms, while the asynchronous design simplifies hardware interfaces, offering engineers an efficient and reliable memory solution over more complex synchronous or higher-voltage alternatives.

Typical Applications

  • Embedded systems requiring fast and reliable volatile memory for data buffering and temporary storage, such as industrial controllers and instrumentation.
  • Networking equipment where low-latency SRAM is necessary for packet buffering and rapid access in data paths.
  • Consumer electronics that demand low power consumption combined with high-speed data access in compact form factors.
  • Medical devices that require stable memory operation across varying environmental conditions without frequent refresh cycles.

CY7C1019BV33-10VC Brand Info

The CY7C1019BV33-10VC is a static RAM product from a leading semiconductor manufacturer specializing in high-quality memory devices optimized for industrial and commercial applications. This product line focuses on combining speed, low power consumption, and ease of integration to meet the performance demands of modern electronic systems. With robust design and manufacturing standards, this SRAM supports customers requiring durable and consistent memory solutions for embedded systems, networking, and consumer electronics.

FAQ

What is the memory capacity and organization of this SRAM?

The device features a memory organization of 32K by 8 bits, which means it provides 32,768 addressable locations with 8 bits per location. This configuration is well

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