CY7C1019B-12ZXCT Overview
The CY7C1019B-12ZXCT is a high-performance static RAM (SRAM) device designed for fast, reliable memory storage in industrial and embedded systems. Featuring a 1 Mbit density organized as 131,072 words by 8 bits, it operates at a 12 ns access time, delivering quick data retrieval essential for demanding applications. This low-power CMOS SRAM supports a single 5 V power supply and includes advanced features such as three-state outputs and data retention capabilities. Ideal for engineers and sourcing specialists looking for robust memory solutions, this device combines speed, stability, and ease of integration. Learn more from the IC Manufacturer.
CY7C1019B-12ZXCT Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1 Mbit (131,072 x 8 bits) |
| Access Time | 12 ns |
| Operating Voltage | 5 V ?? 10% |
| Input/Output Configuration | Three-State Output |
| Standby Current | 10 mA (typical) |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 44-pin TSOP (Type I) |
| Data Retention Voltage | 2.0 V (minimum) |
| Power Dissipation | Low power CMOS technology |
CY7C1019B-12ZXCT Key Features
- Fast 12 ns access time: Enables rapid data access for high-speed computing, improving system throughput in performance-sensitive environments.
- Single 5 V power supply: Simplifies power management and reduces system complexity, aiding in seamless integration with existing 5 V systems.
- Three-state outputs: Allows easy bus sharing and expanded memory configurations without additional control logic, enhancing system scalability.
- Low standby and operating current: Contributes to energy-efficient designs, reducing overall power consumption in battery-powered or power-sensitive applications.
- Data retention mode: Supports low-voltage data preservation to maintain memory contents during power fluctuations or shutdowns, ensuring data integrity.
- Industry-standard 44-pin TSOP package: Offers a compact footprint for space-constrained applications while maintaining reliable electrical performance.
CY7C1019B-12ZXCT Advantages vs Typical Alternatives
This static RAM device offers a compelling balance of speed and power efficiency compared to typical alternatives. Its 12 ns access time outperforms many standard SRAMs, while the low standby current extends device operation in energy-conscious designs. The integrated three-state outputs facilitate flexible memory bus configurations, reducing the need for additional components. Overall, this product provides a reliable, fast, and power-optimized memory solution suitable for industrial and embedded systems requiring consistent performance and ease of integration.
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Typical Applications
- Embedded systems requiring fast, non-volatile data storage with quick access times to support real-time processing and control functions.
- Industrial automation equipment where reliable and low-power memory is critical for maintaining system stability and uptime.
- Networking hardware such as routers and switches, which benefit from rapid data buffering and memory management.
- Consumer electronics that demand compact, high-speed memory solutions for enhanced device responsiveness and user experience.
CY7C1019B-12ZXCT Brand Info
The CY7C1019B-12ZXCT is part of a well-established line of high-quality SRAM products from a leading semiconductor manufacturer known for innovation and reliability. Designed to meet the stringent demands of industrial and embedded markets, this device reflects the brand??s commitment to delivering robust memory components that combine performance, power efficiency, and ease of integration. The product is backed by comprehensive datasheets and technical support, ensuring engineers and sourcing specialists can deploy it confidently in their applications.
FAQ
What is the primary memory organization of the CY7C1019B-12ZXCT?
The memory is organized as 131,072 words by 8 bits, providing a total of 1 Mbit of storage. This arrangement supports byte-wide data access, making it suitable for various embedded and industrial applications requiring efficient memory management.
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