CY7C1018DV33-10VXI Overview
The CY7C1018DV33-10VXI is a high-performance 1K x 18-bit static RAM designed for fast, reliable data storage in industrial and embedded applications. Operating at a 3.3V power supply with a 10 ns access time, this device ensures low-latency memory access ideal for cache buffers, data acquisition systems, and telecommunications equipment. Featuring a 36-pin SOJ package, it offers easy integration into space-constrained PCB layouts. Its asynchronous operation facilitates versatile timing control, making it suitable for various high-speed data handling requirements. Sourced from a trusted IC Manufacturer, this SRAM delivers consistent performance and robustness for demanding industrial environments.
CY7C1018DV33-10VXI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 1K x 18-bit |
| Access Time | 10 ns |
| Operating Voltage | 3.3 V ?? 0.3 V |
| Package Type | 36-pin SOJ |
| Data Retention Voltage | 2.0 V (minimum) |
| Operating Temperature Range | 0??C to +70??C |
| Input/Output Type | TTL compatible |
| Power Consumption | Low active power typical |
| Write Cycle Time | 12 ns (maximum) |
CY7C1018DV33-10VXI Key Features
- Fast 10 ns access time: Enables rapid data retrieval, reducing system latency in high-speed applications.
- Wide 18-bit data bus: Supports broader data paths, improving throughput for complex data processing tasks.
- 3.3V low-voltage operation: Minimizes power consumption while maintaining robust performance, essential for energy-efficient system designs.
- Asynchronous SRAM design: Allows flexible timing control without clock dependency, simplifying interface with various microcontrollers and processors.
- Compact 36-pin SOJ package: Facilitates easy PCB layout integration in space-constrained industrial equipment.
- Data retention down to 2.0 V: Ensures data integrity during power-down or brownout conditions, enhancing system reliability.
- TTL-compatible inputs and outputs: Provides straightforward interfacing with standard logic families for seamless system integration.
CY7C1018DV33-10VXI Advantages vs Typical Alternatives
This SRAM offers a compelling combination of high-speed 10 ns access time and 3.3V low-voltage operation, outperforming many traditional 5V SRAMs in power efficiency without compromising speed. Its 18-bit data width supports wider data words than typical 8- or 16-bit SRAMs, enhancing throughput. The asynchronous design provides flexible timing, which is advantageous over synchronous counterparts in systems requiring variable access patterns. Overall, it delivers reliable performance with low power consumption, making it ideal for industrial and embedded memory solutions.
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Typical Applications
- High-speed cache memory for microprocessor systems, enabling rapid access to frequently used data and improving overall processing efficiency in industrial computing.
- Data acquisition and buffering in instrumentation systems requiring quick and reliable storage of sensor outputs.
- Telecommunications equipment memory, supporting fast data transfer and temporary storage in network switching and routing devices.
- Embedded systems requiring compact, low-power SRAM for temporary data storage during real-time processing tasks.
CY7C1018DV33-10VXI Brand Info
The CY7C1018DV33-10VXI is part of a reliable SRAM product line from a well-established semiconductor manufacturer known for high-quality integrated circuits. This device reflects the brand??s commitment to delivering robust, high-speed memory solutions optimized for industrial and embedded markets. Designed with stringent quality controls and tested for performance consistency, this SRAM supports engineers and sourcing specialists in achieving dependable system designs with lasting value and efficiency.
FAQ
What is the typical power consumption of the CY7C1018DV33-10VXI?
The device operates at a low active power level suitable for 3.3V systems, which helps reduce overall energy consumption in your design. Exact power
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