CY7C1018CV33-12VI 1M x18 SRAM Memory IC – 44-Pin PLCC Package

  • This device provides high-speed CMOS memory storage, enabling efficient data buffering and fast access times.
  • Operating at a 12 ns cycle time, it supports quick read/write operations critical for performance-sensitive applications.
  • The 44-pin TSOP package offers a compact footprint, facilitating better board space utilization in dense designs.
  • Commonly used in embedded systems, it enhances system responsiveness by reducing memory latency in real-time processing.
  • Manufactured with stringent quality controls, it ensures consistent reliability under varying environmental conditions.
产品上方询盘

CY7C1018CV33-12VI Overview

The CY7C1018CV33-12VI is a high-performance 1K x 8 CMOS Static RAM designed for fast and reliable memory storage in various industrial and computing applications. Operating at 3.3V supply voltage, this SRAM provides a 12 ns access time, ensuring rapid data retrieval and efficient system performance. Its low power consumption and TTL-compatible inputs and outputs make it ideal for integration into power-sensitive and high-speed digital systems. Suitable for engineers and sourcing specialists, this memory device supports robust performance where quick access and data integrity are critical. For more details, visit IC Manufacturer.

CY7C1018CV33-12VI Technical Specifications

ParameterSpecification
Memory Organization1K x 8 bits
Access Time12 ns
Supply Voltage (Vcc)3.3 V ?? 0.3 V
Input/Output TypeTTL Compatible
Operating Temperature Range0??C to +70??C (Commercial)
Standby CurrentTypically 10 ??A
Operating CurrentTypically 80 mA
Package Type44-pin PLCC

CY7C1018CV33-12VI Key Features

  • Fast 12 ns Access Time: Enables high-speed data retrieval, improving overall system throughput in timing-critical applications.
  • Low Power Consumption: With a standby current typically at 10 ??A, it supports energy-efficient designs, reducing heat dissipation and power costs.
  • TTL-Compatible Input/Output: Ensures seamless integration with standard logic families, simplifying interface design with existing digital systems.
  • 3.3 V Power Supply: Supports low-voltage operation for modern systems, enhancing compatibility and reducing power requirements.

CY7C1018CV33-12VI Advantages vs Typical Alternatives

This SRAM model stands out by offering a combination of fast 12 ns access time and low power consumption at a 3.3 V supply, which is advantageous over older 5 V devices. Its TTL-compatible I/O ensures easier integration compared to lower-speed or non-standard memory types. The compact 44-pin PLCC package optimizes board space use while maintaining reliability and performance, making it a superior choice for systems requiring fast, low-voltage SRAM.

Typical Applications

  • Embedded systems requiring fast, reliable SRAM for temporary data storage, including microcontroller and DSP buffer memory implementations where speed and power efficiency are critical.
  • Networking equipment such as routers and switches, which benefit from quick access memory for packet buffering and fast data processing.
  • Industrial control systems that depend on stable, low-power memory under varying operating conditions.
  • Consumer electronics requiring compact memory modules with fast access times and low power consumption to extend battery life.

CY7C1018CV33-12VI Brand Info

The CY7C1018CV33-12VI is manufactured by Cypress Semiconductor, a recognized leader in high-quality semiconductor memory solutions. This static RAM product is part of Cypress??s well-established portfolio of CMOS SRAMs designed to deliver dependable, high-speed memory performance for a wide range of industrial and commercial applications.

FAQ

What is the access time of this SRAM device?

The device features a fast access time of 12 nanoseconds, making it suitable for applications requiring rapid data retrieval and minimal latency.

What supply voltage does the CY7C1018CV33-12VI operate on?

It operates on a 3.3 V supply voltage with a tolerance of ??0.3 V, supporting modern low-voltage system designs.

Is this SRAM compatible with TTL logic levels?

Yes, the inputs and outputs are TTL-compatible, allowing easy interfacing with standard TTL logic circuits without additional level shifting.

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产品中间询盘

What are the power consumption characteristics of this memory?

The device has a low standby current typically around 10 ??A and an operating current of approximately 80 mA, supporting power-efficient system operation.

What packaging is used for the CY7C1018CV33-12VI?

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