CY7C1018CV33-12VCT 1M x18 SRAM Memory IC, 48-Pin SOJ Package

CY7C1018CV33-12VCT Overview

The CY7C1018CV33-12VCT is a high-performance, 1M x 18-bit static RAM memory device designed for industrial and embedded system applications. This synchronous SRAM operates at a 3.3V power supply with a 12 ns access time, ensuring rapid data access and low power consumption. Its 18-bit wide data bus supports efficient data throughput, making it ideal for systems requiring fast, reliable on-chip memory. The device??s advanced CMOS technology guarantees robust performance and ease of integration with 3.3V logic systems. For sourcing and design engineers looking for a dependable memory solution, the CY7C1018CV33-12VCT offers a balanced combination of speed, density, and power efficiency. More details are available from the IC Manufacturer.

CY7C1018CV33-12VCT Technical Specifications

CY7C1018CV33-12VCT Key Features

• High-Speed Access: 12 ns access time enables fast data retrieval, critical for performance-sensitive embedded applications.
• Wide Data Bus: 18-bit data width supports efficient parallel data operations, reducing processing latency.
• Low Voltage Operation: Designed for 3.3V power supply, it minimizes power consumption and heat generation within system constraints.
• CMOS Technology: Ensures low static and dynamic power dissipation, enhancing device reliability and longevity.
• Compact Packaging: The 54-pin TSSOP package optimizes PCB space while maintaining excellent signal integrity.
• Commercial Temperature Range: Guarantees stable operation in standard industrial and commercial environments.

CY7C1018CV33-12VCT Advantages vs Typical Alternatives

This SRAM device offers a compelling balance of speed and power efficiency compared to traditional memory alternatives. Its 12 ns access time and 3.3V CMOS operation provide improved system responsiveness and lower energy consumption. The 18-bit data bus supports broader data paths not commonly found in equivalent devices, enabling enhanced throughput. Furthermore, the compact TSSOP packaging facilitates easier integration into space-constrained industrial applications.

Typical Applications

• High-speed buffer memory in networking equipment and telecom systems where rapid data access is critical to maintain throughput and reduce latency.
• Embedded system memory for real-time control units requiring reliable, low-latency SRAM storage.
• Cache memory in data processing and signal processing applications that demand fast read/write cycles.
• Industrial automation equipment where stable memory performance under commercial temperature conditions is required.

CY7C1018CV33-12VCT Brand Info

The CY7C1018CV33-12VCT memory device is manufactured by a leading semiconductor provider specializing in high-quality CMOS memory solutions. This product line is engineered to meet the demanding requirements of industrial and embedded system designers, combining advanced fabrication techniques with rigorous quality control. The brand is recognized for delivering reliable, high-performance SRAM devices optimized for low voltage operation and fast access times.

FAQ

What is the operating voltage range for this SRAM device?

The device operates at a nominal voltage of 3.3 V with a tolerance of ??0.3 V, making it suitable for 3.3V logic systems commonly used in industrial and embedded applications.

What packaging options are available for this memory component?

This SRAM is available in a 54-pin Thin Shrink Small Outline Package (TSSOP), which offers a compact footprint and facilitates high-density PCB layouts while ensuring signal