CY7C1018BV33-12VCT 18Kb FIFO Memory Buffer IC – 32-Pin VCT Package

CY7C1018BV33-12VCT Overview

The CY7C1018BV33-12VCT is a high-performance static RAM (SRAM) device designed for fast, reliable memory storage in industrial and embedded systems. Featuring a 1M-bit density configured as 131,072 x 8 bits, this component operates at a 12 ns access time under a 3.3 V supply, making it ideal for applications requiring rapid data access and low latency. Its low power consumption and TTL-compatible inputs and outputs support efficient system integration. Engineered for robust operation, this SRAM ensures data integrity and stability across a wide range of industrial conditions. For sourcing and technical details, visit IC Manufacturer.

CY7C1018BV33-12VCT Technical Specifications

CY7C1018BV33-12VCT Key Features

• High-speed 12 ns access time: Enables rapid data retrieval, enhancing system performance in time-sensitive applications.
• Low power consumption: Reduces overall system power usage, critical for energy-efficient embedded designs.
• Wide operating temperature range (-40??C to +85??C): Ensures reliable operation in harsh industrial environments.
• TTL-compatible inputs and outputs: Simplifies integration with standard digital logic circuits.
• 44-pin TSOP package: Supports compact PCB layouts and efficient heat dissipation.
• Data retention at voltages as low as 2.0 V: Maintains memory contents during power fluctuations or standby modes.
• High reliability and endurance: Designed to maintain data integrity over extended use periods.

CY7C1018BV33-12VCT Advantages vs Typical Alternatives

This SRAM device offers faster access speeds and lower power consumption compared to many standard asynchronous SRAM alternatives. Its wide temperature tolerance and data retention capability provide enhanced reliability for industrial applications. Additionally, the 3.3 V operation aligns well with modern low-voltage digital systems, enabling seamless integration and reducing power dissipation in complex electronics.

Typical Applications

• High-speed buffering and cache memory in embedded control systems requiring rapid read/write cycles and stable data retention in industrial temperature ranges.
• Networking equipment where low latency memory storage is critical for packet processing and system throughput.
• Telecommunications devices that demand reliable SRAM for temporary data storage under varying environmental conditions.
• Consumer electronics and handheld devices needing fast, low-power SRAM to enhance performance and battery life.

CY7C1018BV33-12VCT Brand Info

This SRAM module is part of a well-established family of high-speed, low-power memory products from a leading semiconductor manufacturer. The device is engineered to meet stringent industrial requirements, offering dependable performance and ease of integration. The brand is recognized globally for quality and innovation in memory technologies, providing engineers with trusted components that support advanced system designs.

FAQ

What is the primary memory size and organization of this SRAM?

The device features a memory size of 1 megabit, organized as 131,072 words of 8 bits each. This allows for ample storage capacity suitable for a variety of embedded and industrial applications.

What voltage supply does this SRAM require for operation