CY7C1018BV33-12VC 16K x 8 CMOS SRAM Memory IC – 32-Pin DIP Package

  • This device provides high-speed synchronous static RAM, enabling fast data access and improved system performance.
  • Operating at a 12 ns cycle time, it supports quick read/write operations essential for timing-critical applications.
  • The 44-pin TSOP package offers a compact footprint, saving valuable board space in dense circuit designs.
  • Suitable for buffering and cache memory tasks in embedded systems, enhancing data throughput and responsiveness.
  • Manufactured under strict quality controls, ensuring dependable operation and long-term stability in various environments.
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CY7C1018BV33-12VC Overview

The CY7C1018BV33-12VC is a high-performance 1M-bit static RAM device designed for industrial and embedded applications requiring fast access times and reliable data storage. Operating at a 3.3V power supply, it features a 12ns access time ensuring quick data retrieval, which is critical in real-time processing systems. The device supports a 128K x 8-bit organization with a low-power CMOS technology that balances speed and power efficiency. Its robust design and standard 32-pin PLCC package make it suitable for integration in diverse applications, supported by consistent performance and durability. For more details, visit IC Manufacturer.

CY7C1018BV33-12VC Technical Specifications

ParameterSpecification
Memory Density1 Megabit (128K x 8 bits)
Access Time12 ns
Operating Voltage3.3 V ?? 0.3 V
Data Retention Voltage2.0 V (Minimum)
Package Type32-pin PLCC
Operating Temperature Range0??C to +70??C
Power Consumption (Operating)Typical 160 mW
Standby Current5 mA (Max)
Input/Output Voltage LevelsTTL Compatible

CY7C1018BV33-12VC Key Features

  • Fast 12 ns Access Time: Enables rapid data retrieval and processing, ideal for time-critical embedded systems.
  • Low Operating Voltage (3.3 V): Reduces power consumption, enhancing efficiency and thermal management in compact designs.
  • Standard 32-pin PLCC Package: Facilitates easy PCB integration and replacement in legacy and new systems.
  • Robust Data Retention: Maintains stored information down to 2.0 V, ensuring data integrity during power fluctuations or standby modes.
  • CMOS Technology: Provides high noise immunity and low static power dissipation, improving overall device reliability.
  • TTL-Compatible I/O: Ensures easy interfacing with a wide range of digital logic components and microcontrollers.

CY7C1018BV33-12VC Advantages vs Typical Alternatives

This SRAM device offers a compelling combination of low voltage operation and fast 12 ns access time, outperforming many alternatives that require higher voltage levels or exhibit slower speeds. Its low standby current enhances energy efficiency, while the robust data retention voltage ensures reliability in industrial environments. The standard PLCC package supports easy deployment, making it a dependable choice for engineers seeking a balance of speed, power, and integration compatibility.

Typical Applications

  • Embedded systems requiring quick, reliable data storage and retrieval, such as industrial controllers and communication devices, where fast memory access is essential for system responsiveness.
  • Buffer memory in high-speed data acquisition systems, providing temporary storage to manage data flow efficiently.
  • Cache memory implementations in microprocessor systems to improve processing throughput.
  • General-purpose static RAM in applications demanding low power consumption combined with high reliability and performance.

CY7C1018BV33-12VC Brand Info

The CY7C1018BV33-12VC is part of a well-established family of SRAM products developed by a leading semiconductor manufacturer. Designed with precision CMOS technology, it reflects the brand??s commitment to delivering high-quality, high-speed memory solutions optimized for industrial and embedded applications. This model benefits from comprehensive testing and quality assurance processes, ensuring consistent performance and long-term reliability in demanding operational environments.

FAQ

What is the operating voltage range for this SRAM device?

The device operates reliably at a nominal voltage of 3.3 V, with an acceptable range of ??0.3 V. It also supports data retention at voltages as low as 2.0 V

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