CY7C1011CV33-12ZXC Overview
The CY7C1011CV33-12ZXC is a high-performance CMOS static RAM designed for fast and reliable data storage in embedded systems and industrial applications. Operating at a 3.3V power supply, this 1M-bit memory device offers a 12 ns access time, ensuring quick data retrieval and efficient system performance. Its low power consumption and standard asynchronous interface make it suitable for a wide range of applications requiring high-speed memory with minimal power overhead. This device is engineered for durability and compatibility with common memory architectures, making it a preferred choice for engineers and sourcing specialists seeking robust memory solutions from a trusted IC Manufacturer.
CY7C1011CV33-12ZXC Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1 Megabit (128K x 8 bits) |
| Access Time | 12 ns |
| Power Supply Voltage | 3.3 V ?? 0.3 V |
| Operating Temperature Range | 0??C to +70??C |
| Standby Power (TTL Input) | 10 mA (max) |
| Operating Power (Max) | 150 mA |
| Package Type | 44-Pin Plastic Leaded Chip Carrier (PLCC) |
| Data Retention Voltage | 2.0 V (min) |
| Input/Output Configuration | 3-State TTL Compatible |
CY7C1011CV33-12ZXC Key Features
- Fast 12 ns access time: Enables rapid data access, improving system throughput and performance in time-critical applications.
- Low voltage 3.3V operation: Reduces power consumption and heat dissipation, supporting energy-efficient designs and longer device lifespan.
- Asynchronous static RAM architecture: Simplifies interfacing with microprocessors without the need for complex clock management.
- TTL-compatible 3-state outputs: Facilitates easy bus sharing and integration into existing digital systems.
CY7C1011CV33-12ZXC Advantages vs Typical Alternatives
This memory device offers a distinct advantage through its combination of fast 12 ns access time and low 3.3V power operation, delivering superior speed and energy efficiency compared to many traditional 5V SRAMs. Its asynchronous design and TTL compatibility enhance integration flexibility and system reliability, making it a cost-effective and robust solution for industrial and embedded memory applications.
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Typical Applications
- Embedded systems requiring high-speed volatile memory for data buffering and temporary storage in communications and control devices.
- Industrial automation equipment needing reliable and fast SRAM for real-time processing tasks.
- Networking hardware such as routers and switches, where quick memory access improves data throughput and system responsiveness.
- Consumer electronics that demand low power consumption and fast memory access to optimize battery life and device performance.
CY7C1011CV33-12ZXC Brand Info
This device is part of a well-established portfolio of high-quality CMOS static RAM products designed and manufactured with rigorous quality standards. It reflects the brand??s commitment to delivering dependable semiconductor memory solutions optimized for speed, power efficiency, and ease of integration. The product aligns with industry-standard packaging and pinouts, ensuring compatibility with a wide range of systems and simplifying design cycles for OEMs and contract manufacturers.
FAQ
What is the power supply voltage range for this SRAM device?
The CY7C1011CV33-12ZXC operates at a nominal 3.3V supply voltage with an allowable variation of ??0.3V. This low voltage operation helps reduce power consumption compared to traditional 5V SRAMs, making it suitable for energy-conscious designs.
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How does the 12 ns access time impact system performance?
A 12 ns access time means the SRAM can read or write data in just 12 nanoseconds, enabling faster data retrieval and storage. This speed is critical in applications where quick memory access reduces processing delays and improves overall system throughput.
Is this SRAM device compatible with standard microprocessor interfaces?
Yes, the SRAM uses an asynchronous interface with TTL-compatible 3-state outputs, allowing straightforward integration with a wide range of