CY7C1011CV33-12AIT 1M x 8 SRAM Memory IC – 44-Pin TSOP Package

CY7C1011CV33-12AIT Overview

The CY7C1011CV33-12AIT is a high-performance 1M-bit (128K x 8) static RAM designed for fast access and low power consumption. Operating at 3.3V with a 12 ns access time, this SRAM is ideal for applications requiring reliable, high-speed memory storage. Its CMOS fabrication ensures minimal power draw and enhanced noise immunity, making it well-suited for embedded systems and industrial electronics. Offered in a compact 32-pin SOJ package, this memory device supports byte-wide data organization with separate output enable and byte control signals. For detailed sourcing and technical support, refer to the IC Manufacturer.

CY7C1011CV33-12AIT Technical Specifications

CY7C1011CV33-12AIT Key Features

• Fast 12 ns access time: Enables rapid data retrieval and storage, improving system throughput in high-speed computing environments.
• 3.3V low-voltage operation: Reduces power consumption and heat dissipation, critical for energy-efficient industrial and embedded systems.
• Separate output enable and byte control signals: Provides flexible memory control and supports byte-level data operations, simplifying interface design.
• CMOS technology: Ensures low static power dissipation and high noise immunity, enhancing device reliability in noisy industrial environments.

CY7C1011CV33-12AIT Advantages vs Typical Alternatives

This SRAM offers a distinct advantage in speed and power efficiency compared to typical asynchronous static RAMs. Its 12 ns access time supports faster data processing, while the 3.3V operation lowers power consumption. The inclusion of byte control signals allows for more precise data handling, improving integration flexibility. Overall, it delivers higher performance and energy savings without compromising reliability, making it preferable for demanding industrial and embedded applications.

Typical Applications

• Embedded systems requiring fast, reliable memory storage, such as microcontroller-based devices and communication equipment.
• Cache memory in high-speed computing where quick access to data improves system performance.
• Industrial control systems where low power consumption and stable operation over temperature ranges are critical.
• Networking hardware needing byte-level memory access and fast response times for packet buffering and processing.

CY7C1011CV33-12AIT Brand Info

The CY7C1011CV33-12AIT is developed by a leading semiconductor manufacturer known for delivering high-quality memory solutions. This product complements the company??s extensive portfolio of CMOS SRAM devices, featuring advanced fabrication processes for enhanced speed and power efficiency. Designed to meet stringent industrial standards, this memory component ensures dependable performance in a wide range of demanding electronic systems.

FAQ

What is the operating voltage range for the CY7C1011CV33-12AIT?

The device operates within a voltage range of 3.0V to 3.6V, centered around a nominal 3.3V supply. This low-voltage operation helps minimize power consumption while maintaining high-speed performance suitable for modern embedded applications.

How is data organized in the CY7C1011CV33-12AIT memory?

The memory is organized as 128K words of 8 bits each, supporting byte-wide data access. This organization allows efficient handling of 8-bit data and provides separate byte control signals for flexible data manipulation.

What package type does this memory come in, and why is it important?

The device is housed in a 32-pin SOJ (Small Outline J-lead) package. This compact form factor