CY7C1011CV33-10ZC Overview
The CY7C1011CV33-10ZC is a high-performance 1M x 8-bit Static Random Access Memory (SRAM) device optimized for industrial and embedded applications. Operating at a 3.3V power supply with a fast 10 ns access time, it delivers reliable, low-latency data storage ideal for buffering, caching, and temporary data retention. Its compact 44-pin PLCC package facilitates easy integration into space-constrained circuit boards. Designed for robust performance and low power consumption, this SRAM is well-suited for systems requiring rapid data access with minimal wait states. For detailed specifications and sourcing, visit IC Manufacturer.
CY7C1011CV33-10ZC Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 1M x 8 bits |
| Access Time | 10 ns |
| Supply Voltage (Vcc) | 3.3 V ?? 0.3 V |
| Package Type | 44-pin PLCC |
| Operating Temperature Range | 0??C to +70??C (Commercial) |
| Data Retention Voltage | 2.0 V minimum |
| Power Consumption (Active) | Typical 210 mW |
| Input/Output Type | TTL compatible |
| Standby Current | 10 ??A (max) |
CY7C1011CV33-10ZC Key Features
- Fast 10 ns Access Time: Enables rapid data retrieval, reducing system latency and improving overall processing speed.
- Low Power Consumption: Designed for efficient power usage during both active and standby modes, extending battery life in portable applications.
- 3.3V Operation: Compatible with modern low-voltage systems, helping reduce heat dissipation and power requirements.
- TTL-Compatible Inputs and Outputs: Ensures straightforward interfacing with a wide range of logic families and microcontrollers.
- Commercial Temperature Range: Supports reliable operation in typical industrial and commercial environments.
- 44-Pin PLCC Packaging: Provides a compact and durable footprint for space-sensitive board designs.
- Data Retention Capability: Maintains stored information at voltages as low as 2.0 V for data integrity during power fluctuations.
CY7C1011CV33-10ZC Advantages vs Typical Alternatives
This SRAM device offers superior speed with a 10 ns access time compared to many standard alternatives operating at slower speeds. Its low-voltage 3.3 V operation reduces power consumption, making it ideal for modern embedded systems. Additionally, TTL-compatible I/O and a compact PLCC package improve integration flexibility. These advantages collectively enhance system reliability and efficiency while simplifying board design and lowering overall power budgets.
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Typical Applications
- High-speed buffering and caching in microprocessor-based systems, where fast access to temporary data is critical for performance and system responsiveness.
- Embedded memory in telecommunications equipment requiring reliable, low-latency data storage and retrieval.
- Industrial control systems demanding robust memory devices operating across commercial temperature ranges.
- Data acquisition and networking hardware where space constraints necessitate compact packaging without compromising speed.
CY7C1011CV33-10ZC Brand Info
The CY7C1011CV33-10ZC is part of a family of SRAM products designed by a leading semiconductor manufacturer specializing in high-speed memory solutions. Known for combining cutting-edge performance with low power operation, this product line supports a wide range of industrial and embedded applications. The brand emphasizes quality, reliability, and compatibility with evolving system requirements, making this SRAM a trusted choice for engineers and sourcing specialists aiming for optimized system design and dependable memory performance.
FAQ
What is the access time of the CY7C1011CV33-10ZC, and why is it important?
The device features a fast 10 ns access time, which means it can read or write data within 10 nanoseconds. This speed is crucial in reducing wait states in microprocessor systems, enabling quicker data processing and improving overall system performance.
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