CY7C1009BN-15VIT Overview
The CY7C1009BN-15VIT is a high-performance 1M x 8-bit static RAM device optimized for fast access and reliable memory storage. Designed with a 15ns access time, it supports rapid data retrieval ideal for demanding industrial and computing applications. The device operates on a 5V ??10% power supply and features a 28-pin plastic SOJ (Small Outline J-lead) package, offering a compact footprint for space-sensitive designs. This SRAM supports standard asynchronous operation with separate output enable and chip enable controls, enhancing integration flexibility. For detailed technical and sourcing information, visit IC Manufacturer.
CY7C1009BN-15VIT Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1 Megabit (1M x 8 bits) |
| Access Time | 15 ns |
| Operating Voltage | 5 V ??10% |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 28-pin Plastic SOJ |
| Data Retention Voltage | 2 V minimum |
| Input/Output Configuration | Asynchronous, separate OE (Output Enable) and CE (Chip Enable) |
| Standby Current | Typically 100 ??A |
| Operating Current | Typically 70 mA |
| Data Retention Current | Typically 5 ??A |
CY7C1009BN-15VIT Key Features
- Fast 15ns access time: Enables rapid data access, critical for high-speed processing in embedded systems and computing applications.
- 1M x 8-bit organization: Provides a large memory capacity suitable for buffer storage and cache memory requirements.
- Asynchronous operation with separate CE and OE signals: Allows flexible memory control and easy integration into diverse system architectures.
- Low power consumption: Features a standby current of approximately 100 ??A, reducing power usage during idle states and extending system energy efficiency.
- Robust 28-pin SOJ package: Facilitates reliable mounting and excellent thermal dissipation in compact industrial designs.
CY7C1009BN-15VIT Advantages vs Typical Alternatives
This SRAM device offers a competitive advantage through its combination of fast 15ns access time and low standby current, delivering both speed and energy efficiency. Its asynchronous control signals enable straightforward integration compared to synchronous alternatives. Additionally, the 28-pin SOJ package balances compactness with ease of installation, making it preferable for systems requiring reliable, high-speed memory with minimal power overhead.
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Typical Applications
- High-speed buffer memory for networking equipment and communication controllers, where fast access times enhance data throughput and system responsiveness.
- Cache memory in embedded microprocessor systems requiring low latency and quick data retrieval.
- Temporary data storage in industrial control systems that demand reliable and fast SRAM performance under standard commercial temperature ranges.
- Memory expansion modules for computing devices, providing additional non-volatile memory capacity with efficient power management.
CY7C1009BN-15VIT Brand Info
The CY7C1009BN-15VIT is manufactured by Cypress Semiconductor, a globally recognized leader in memory and programmable device technology. Known for their high-quality static RAM solutions, Cypress combines advanced semiconductor fabrication with rigorous testing to ensure dependable performance and longevity. This device exemplifies Cypress??s commitment to delivering fast, power-efficient memory components tailored for demanding industrial and commercial applications.
FAQ
What is the primary memory organization of the CY7C1009BN-15VIT?
The device is organized as 1M x 8 bits, which means it provides one megabit of memory arranged into 1 million addresses, each holding 8 bits of data. This configuration is standard for applications requiring moderate to large memory storage.
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What voltage range does the CY7C1009BN-15VIT operate within?
It operates at a nominal voltage of 5V with a tolerance of ??10%, making it compatible with standard 5V logic systems commonly used in industrial and commercial




