CY7C1009BN-15VI Overview
The CY7C1009BN-15VI is a high-performance 1-Mbit static RAM (SRAM) device optimized for fast, reliable data storage in embedded systems and industrial applications. Featuring a 15 ns access time and a 32-pin JEDEC-compatible SOJ package, this SRAM delivers efficient memory access with low power consumption. It supports a single 5 V power supply and offers a simple interface with separate output enable and write enable controls, ensuring seamless integration into complex electronic designs. Engineers and sourcing specialists rely on this memory solution for its speed, stability, and compatibility in demanding environments. Available from IC Manufacturer.
CY7C1009BN-15VI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1 Megabit (128K ?? 8 bits) |
| Access Time | 15 ns |
| Package Type | 32-pin SOJ (Small Outline J-lead) |
| Operating Voltage | 5 V ?? 10% |
| Data I/O | 8-bit bidirectional |
| Standby Current | 10 mA (typical) |
| Operating Temperature | 0??C to 70??C (Commercial) |
| Control Signals | Output Enable (OE), Write Enable (WE), Chip Enable (CE) |
| Power Dissipation | Max 1.35 W |
| Package Dimensions | SOJ 13.33 mm x 7.62 mm |
CY7C1009BN-15VI Key Features
- Fast 15 ns access time: Enables rapid read/write operations ideal for high-speed embedded systems requiring quick data retrieval.
- Low power consumption: Typical standby current of 10 mA reduces overall power usage, benefiting battery-powered or energy-sensitive applications.
- JEDEC-standard SOJ package: Ensures easy integration with existing PCB layouts and industry-standard sockets, simplifying system design.
- Separate control signals: Independent Output Enable, Write Enable, and Chip Enable pins allow precise memory control and efficient data management.
CY7C1009BN-15VI Advantages vs Typical Alternatives
This SRAM device offers superior speed and reliable access times compared to typical asynchronous SRAMs. Its low standby power and JEDEC-compliant packaging enhance system efficiency and compatibility, making it ideal for engineers seeking a balance of performance and integration ease. The separate control signals improve operational flexibility, setting it apart from simpler memory solutions.
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Typical Applications
- Embedded systems requiring fast, reliable volatile memory for buffering and temporary data storage in industrial automation and instrumentation.
- Networking equipment that demands quick access to routing tables and packet buffers.
- Consumer electronics where low power usage and fast memory access improve device responsiveness.
- Data acquisition systems that require stable, high-speed memory for real-time data processing.
CY7C1009BN-15VI Brand Info
The CY7C1009BN-15VI is part of a well-established family of static RAM products known for their performance and reliability. Manufactured by a leading semiconductor supplier, this device reflects rigorous quality control and compliance with industry standards. Its packaging and electrical characteristics are tailored to support diverse industrial and commercial applications, reinforcing the brand??s commitment to innovation and customer-focused memory solutions.
FAQ
What is the typical access time of this SRAM device?
The device delivers a typical access time of 15 nanoseconds, enabling quick read and write cycles that are suitable for high-speed data processing applications.
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Which package type does this SRAM come in?
This SRAM is available in a 32-pin Small Outline J-lead (SOJ) package, conforming to JEDEC standards for easy mounting and compatibility with standard PCB layouts.
What is the operating voltage range for this memory?
The memory operates reliably on a single 5 V power supply with a tolerance of ??10%, ensuring stable operation within common industrial voltage levels.
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How does the device control data read and write operations?
The SRAM uses separate control signals including Output Enable (OE), Write Enable (WE