CY7C1009BN-12VC 1M x 9 Static RAM Memory IC in 44-Pin PLCC Package

CY7C1009BN-12VC Overview

The CY7C1009BN-12VC is a high-performance static RAM (SRAM) device designed for fast, reliable data storage in a compact 28-pin SOJ package. Featuring a 1M-bit (128K x 8) memory organization and a 12 ns access time, this SRAM offers low power consumption with both low standby and operating currents. Its asynchronous operation simplifies timing requirements, providing engineers with flexible memory integration in industrial and embedded systems. This device is ideal for applications requiring rapid data access and non-volatile-like performance without the complexity of refresh cycles. Available from IC Manufacturer, it supports a broad voltage range to ensure compatibility in diverse electronics environments.

CY7C1009BN-12VC Technical Specifications

CY7C1009BN-12VC Key Features

• 12 ns Access Time: Enables ultra-fast data retrieval, significantly improving system performance in time-critical applications.
• Asynchronous SRAM Operation: Simplifies interface design by removing the need for clock synchronization, allowing for flexible timing control.
• Low Power Consumption: Features a standby current as low as 8 ??A, enhancing energy efficiency in battery-powered or low-power systems.
• Wide Operating Voltage Range: Supports 4.5 V to 5.5 V, ensuring compatibility with standard 5 V logic systems and robust operation.
• Data Retention Capability: Maintains stored information down to 2.0 V, supporting data preservation during power interruptions.
• Robust Temperature Ratings: Commercial temperature range operation from 0??C to 70??C with data retention from -55??C to +125??C, suitable for industrial environments.
• Compact 28-Pin SOJ Package: Facilitates high-density PCB layouts and reliable solder connections for manufacturing efficiency.

CY7C1009BN-12VC Advantages vs Typical Alternatives

This SRAM device delivers faster access times and lower standby power compared to many conventional memory ICs, making it ideal for systems demanding quick data access and power efficiency. Its asynchronous design reduces interface complexity, while the wide voltage and temperature tolerance ensure reliable operation in industrial-grade environments where typical alternatives may fail or require additional circuitry.

Typical Applications

• High-speed buffering and cache memory in embedded systems where rapid data access and minimal latency improve overall system responsiveness.
• Data storage in telecommunications equipment requiring stable, fast memory with low power consumption for continuous operation.
• Industrial control systems that benefit from robust temperature ranges and reliable data retention during power fluctuations.
• Instrumentation and measurement devices needing compact, fast SRAM for temporary data logging and processing tasks.

CY7C1009BN-12VC Brand Info

The CY7C1009BN-12VC is part of Cypress Semiconductor??s well-established portfolio of static RAM devices known for high speed and reliability. Designed to meet stringent performance and quality standards, this SRAM is engineered for industrial and commercial applications requiring dependable memory solutions. Cypress??s reputation for innovative semiconductor technology ensures this product delivers consistent operation and integration ease in demanding system designs.

FAQ

What is the memory organization and size of this SRAM device?

The device is organized as 128K words by 8 bits, providing a total of 1 megabit of memory capacity. This organization supports byte-wide data operations suitable for a variety of embedded and