CY7C1006B-15VCT 1M x 8 SRAM Memory IC – 44-Pin PLCC Package

  • This device provides fast, synchronous static RAM functionality, enabling quick data access for improved system performance.
  • Operating speed supports efficient processing cycles, which is critical for timing-sensitive applications.
  • The compact VCT package reduces board space, facilitating smaller, more integrated hardware designs.
  • Ideal for buffering data in embedded systems, it enhances real-time data handling and system responsiveness.
  • Manufactured to meet rigorous quality standards, ensuring consistent operation over extended periods.
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CY7C1006B-15VCT Overview

The CY7C1006B-15VCT is a high-performance 1 Mbit (128K x 8) static random access memory (SRAM) device designed for speed-critical and low-power industrial applications. Operating at a fast access time of 15 ns, this SRAM supports efficient data storage and retrieval with low latency. Its 5V single power supply and TTL-compatible inputs/outputs make it suitable for a wide range of digital systems requiring reliable and fast memory access. The device is packaged in a 44-pin dual in-line package (DIP), facilitating easy integration into legacy and modern boards. For detailed technical support and sourcing, visit IC Manufacturer.

CY7C1006B-15VCT Technical Specifications

ParameterSpecification
Memory Size1 Mbit (128K x 8)
Access Time15 ns
Operating Voltage5 V ??10%
Package Type44-pin Plastic DIP
Input/Output TypeTTL-compatible
Operating Temperature Range0??C to +70??C
Standby Current20 mA (typical)
Operating Current90 mA (typical)
Data Retention Voltage2 V (minimum)

CY7C1006B-15VCT Key Features

  • High-Speed Access: 15 ns access time enables rapid data retrieval, improving system throughput in timing-sensitive applications.
  • Low Power Consumption: Efficient operating and standby currents reduce overall system power use, enhancing energy efficiency.
  • TTL-Compatible I/O: Ensures seamless interface with standard logic families, simplifying integration into existing digital designs.
  • Reliable Data Retention: Maintains stored data with retention voltage as low as 2 V, supporting robust performance during power fluctuations.
  • Industry-Standard Packaging: 44-pin DIP facilitates easy socketing and replacement in industrial and legacy systems.

CY7C1006B-15VCT Advantages vs Typical Alternatives

This SRAM device offers a distinct advantage in speed and compatibility compared to typical memory alternatives. With a 15 ns access time, it outperforms many standard static RAMs, enabling faster processing. Its low power consumption and robust data retention ensure reliable operation in industrial environments, while TTL-compatible inputs and outputs simplify system design and reduce integration complexity.

Typical Applications

  • High-speed buffer memory in microprocessor-based systems requiring fast read/write cycles and low latency data access.
  • Embedded system memory where consistent 5 V operation and TTL compatibility are critical for interfacing.
  • Industrial control systems demanding reliable data storage under varied operating conditions.
  • Legacy computing platforms requiring DIP-packaged SRAM for straightforward replacement and upgrades.

CY7C1006B-15VCT Brand Info

The CY7C1006B-15VCT is part of Cypress Semiconductor??s legacy SRAM product line, recognized for delivering high-speed, reliable memory solutions optimized for industrial and embedded applications. Cypress has established a reputation for quality semiconductor components, and this device exemplifies their commitment to performance, integration ease, and power efficiency. It is designed to meet rigorous industry standards, providing engineers and sourcing specialists with a dependable memory component for diverse system requirements.

FAQ

What is the operating voltage range for the CY7C1006B-15VCT?

This SRAM operates at a nominal 5 V supply voltage with a tolerance of ??10%. This standard voltage level ensures compatibility with most TTL logic and industrial digital systems, making it suitable for a wide range of applications.

How fast can data be accessed from this SRAM device?

The device supports an access time of 15 nanoseconds, enabling rapid data read and write operations. This speed is advantageous in systems where low latency memory access is critical for performance.

What packaging options are available for this SRAM?

The CY7C1006B-15VCT is provided in a 44-pin plastic dual in-line package (DIP), which is common for ease of handling

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