CY74FCT162543CTPAC Overview
The CY74FCT162543CTPAC is a high-speed 16-bit static random access memory (SRAM) integrated circuit designed for advanced digital systems requiring fast and reliable data storage. Featuring a 16,384 x 4-bit configuration, this device delivers robust memory performance with low power consumption and exceptional access times. Its fast CMOS technology ensures minimal propagation delay, making it ideal for applications demanding rapid data retrieval and storage. The package integrates a 44-pin Thin Quad Flat Package (TQFP), providing efficient board space utilization without compromising signal integrity. For detailed technical support and sourcing, visit the IC Manufacturer.
CY74FCT162543CTPAC Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 16,384 words ?? 4 bits |
| Access Time | 4.5 ns (typical) |
| Operating Voltage | 3.0 V to 3.6 V (Vcc) |
| Power Consumption | Standby Current: 10 ??A (max), Operating Current: 50 mA (typical) |
| Package Type | 44-pin Thin Quad Flat Package (TQFP) |
| Input/Output Configuration | 3-State Outputs |
| Operating Temperature Range | 0??C to 70??C |
| Data Retention Voltage | 2.0 V (minimum) |
| Technology | Fast CMOS (FCT) |
CY74FCT162543CTPAC Key Features
- Fast Access Times: With typical 4.5 ns access speed, the device supports high-performance data processing critical in timing-sensitive systems.
- Low Power Consumption: Optimized for minimal standby and active current, reducing thermal impact and extending operational longevity in embedded applications.
- 3-State Output Buffers: Enables easy bus sharing and system-level integration, improving circuit flexibility and design efficiency.
- Wide Operating Voltage Range: Supports 3.0 V to 3.6 V, ensuring compatibility with modern low-voltage digital logic families.
CY74FCT162543CTPAC Advantages vs Typical Alternatives
This device offers a compelling balance of speed, power efficiency, and integration compared to typical SRAM alternatives. Its fast CMOS technology provides lower propagation delays and reduced power dissipation, making it suitable for high-speed memory applications where reliability and low thermal footprint are critical. The 3-state outputs further enhance system design flexibility, enabling simplified bus architectures compared to standard SRAMs without tri-state capability.
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Typical Applications
- High-speed buffer memory in microprocessor systems, improving data throughput and reducing latency in demanding computing environments.
- Cache memory in digital signal processing (DSP) units to facilitate rapid access to frequently used data.
- Embedded systems requiring compact, low-power memory solutions for real-time data storage and retrieval.
- Communication equipment where fast, reliable memory is needed for temporary data holding and protocol processing.
CY74FCT162543CTPAC Brand Info
This memory device is part of the CY74FCT family, known for leveraging advanced Fast CMOS Technology (FCT) to deliver high-speed and low-power SRAM solutions. Designed and manufactured by a leading IC supplier, the product meets stringent industrial standards for performance and reliability. The CY74FCT162543CTPAC integrates cutting-edge semiconductor technologies to provide engineers with a dependable component suitable for a broad range of industrial and commercial applications.
FAQ
What is the memory capacity and organization of this SRAM?
The memory is organized as 16,384 words by 4 bits, providing a total capacity of 65,536 bits. This configuration supports efficient data storage with a focus on fast access and low power operation.
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What are the key electrical characteristics of this device?
The device operates within a voltage range of 3.0 to 3.6 volts, with typical standby current of 10 ??




