CY62148CV30LL-55BAI Overview
The CY62148CV30LL-55BAI is a high-performance 1M x 16-bit static RAM (SRAM) device designed for applications requiring fast access times and low power consumption. Operating with a 3.0V power supply, this memory offers a 55ns access speed, making it ideal for embedded systems and high-speed data buffering. Its low standby current and static operation allow for efficient power management in battery-powered and portable devices. The device is housed in a compact 44-pin TSOP II package, enabling high-density board layouts. For engineers and sourcing specialists, this SRAM provides a reliable and easy-to-integrate memory solution. More details can be found via IC Manufacturer.
CY62148CV30LL-55BAI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 1M x 16 bits |
| Access Time | 55 ns |
| Operating Voltage | 3.0 V ?? 0.3 V |
| Standby Current (Max) | 25 mA |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 44-pin TSOP II |
| Data Retention Voltage | 2.0 V (min) |
| Input/Output Configuration | 16-bit bidirectional |
| Chip Enable (CE) | Active low |
| Power Supply Current (Operating) | 90 mA (max) |
CY62148CV30LL-55BAI Key Features
- High-Speed Access: With a 55ns access time, the SRAM supports rapid data retrieval, boosting system performance in time-critical applications.
- Low Voltage Operation: Operates efficiently at 3.0V, reducing power consumption and extending battery life in portable electronics.
- Low Standby Current: Minimizes power draw during idle periods, which is essential for energy-sensitive devices.
- Wide Operating Temperature Range: Ensures reliable performance across standard commercial temperature environments for versatile industrial use.
- Compact 44-pin TSOP II Package: Enables high-density PCB layouts, optimizing space without sacrificing functionality.
- Static Operation: Eliminates the need for refresh cycles, simplifying system design and increasing reliability.
- 16-bit Bidirectional I/O: Facilitates efficient data transfer with broad bus compatibility in embedded systems.
CY62148CV30LL-55BAI Advantages vs Typical Alternatives
This SRAM device offers faster access speeds and lower standby current compared to typical asynchronous static RAMs. Its optimized 3.0V operation enhances power efficiency, critical for portable and embedded applications. The compact TSOP II package supports high-density integration, while static operation reduces system complexity versus dynamic RAM alternatives. These factors combine to deliver a reliable, low-power memory solution suited for industrial and commercial embedded systems requiring fast, stable data storage.
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Typical Applications
- High-speed data buffering in embedded control systems, where rapid access and low latency are crucial for system responsiveness.
- Portable electronics requiring low power consumption and compact memory modules to extend battery life and reduce board space.
- Networking equipment that demands fast and reliable memory for packet buffering and routing tables.
- Industrial automation devices operating within standard commercial temperature ranges, benefiting from the device??s robust electrical characteristics.
CY62148CV30LL-55BAI Brand Info
This 1M x 16-bit SRAM is part of a series designed and manufactured by a leading semiconductor company specializing in high-reliability memory products. The brand is recognized for delivering consistent quality, fast access times, and low power consumption in static RAM devices tailored for embedded and industrial applications. The product integrates advanced fabrication technology to meet stringent performance and environmental requirements, making it a trusted choice for engineers and sourcing professionals worldwide.
FAQ
What is the typical access time of this SRAM device?
The device features a maximum access time of 55 nanoseconds, enabling high-speed data retrieval suitable for applications needing fast memory response.
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