CY62147DV30LL-70BVXI 256Kb CMOS SRAM Memory – 48-Pin SOJ Package

  • This device functions as a high-speed CMOS static RAM, enabling fast data access and efficient memory storage.
  • The access time supports quick read/write cycles, which improves overall system performance in timing-critical applications.
  • Its compact TSOP package allows for board-space savings, facilitating integration into space-constrained designs.
  • Ideal for use in embedded systems requiring reliable, low-latency memory for processor cache or buffer storage.
  • Manufactured with strict quality control processes to ensure device reliability and consistent operational stability.
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CY62147DV30LL-70BVXI Overview

The CY62147DV30LL-70BVXI is a high-performance, low-power static RAM device tailored for industrial and embedded applications requiring fast access times and reliable data retention. Featuring a 16K x 4-bit configuration, this SRAM operates at a 70 ns access time, making it suitable for systems demanding rapid data retrieval and storage. Its 3.0 V supply voltage supports compatibility with low-voltage logic systems, enhancing overall power efficiency. Designed with advanced CMOS technology, this memory solution ensures minimal power consumption during both active and standby modes. Engineers and sourcing specialists will appreciate its compact 16-pin SOJ package, facilitating easy PCB integration. For detailed product specifications and procurement options, visit IC Manufacturer.

CY62147DV30LL-70BVXI Technical Specifications

ParameterSpecification
Memory Density16K x 4 bits (65,536 bits)
Access Time70 ns
Operating Voltage3.0 V ?? 0.3 V
Standby Current10 ??A (typical)
Operating Temperature Range-40??C to +85??C
Package Type16-pin SOJ
Data Retention Voltage2.0 V (minimum)
Data Input/Output TypeTTL compatible
Write Cycle Time70 ns

CY62147DV30LL-70BVXI Key Features

  • Fast Access Speed: The 70 ns access time enables rapid data retrieval, improving system responsiveness in time-critical applications.
  • Low Voltage Operation: Operates efficiently at 3.0 V supply voltage, reducing power consumption and enabling compatibility with low-voltage logic circuits.
  • Low Standby Current: Minimal standby current (~10 ??A) extends battery life in portable and embedded systems where power efficiency is critical.
  • Wide Temperature Range: Supports industrial-grade temperature (-40??C to +85??C), ensuring reliable operation in harsh environments.
  • Compact 16-pin SOJ Package: Facilitates easy PCB layout and integration, saving board space and simplifying assembly.
  • CMOS Technology: Provides high noise immunity and reduced power dissipation, enhancing overall system stability and reliability.

CY62147DV30LL-70BVXI Advantages vs Typical Alternatives

This SRAM device offers a compelling balance of speed, power efficiency, and industrial-grade reliability compared to typical memory alternatives. Its 3.0 V operation reduces power consumption, while the fast 70 ns access time supports high-throughput data processing. The low standby current and wide temperature range outperform many standard SRAMs, making it especially suitable for embedded and industrial applications requiring robust performance and extended operational life.

Typical Applications

  • Embedded systems requiring fast, reliable volatile memory for temporary data storage, including microcontroller-based control platforms with strict power budgets.
  • Industrial automation equipment where stable operation under extended temperature ranges and power constraints is essential.
  • Communication devices needing quick access memory buffers to optimize data throughput and latency.
  • Portable instrumentation and measurement devices that benefit from low standby currents to prolong battery life without compromising access speed.

CY62147DV30LL-70BVXI Brand Info

This product is part of the SRAM portfolio from the IC Manufacturer, a recognized supplier of semiconductor memory solutions for industrial and embedded applications. The CY62147DV30LL-70BVXI delivers proven CMOS technology with a focus on low power consumption and high-speed access. This combination supports engineers and sourcing specialists looking for reliable memory components that balance performance, power efficiency, and environmental resilience.

FAQ

What is the access time of this SRAM device?

The access time of this SRAM is 70 nanoseconds, meaning it can read or write data within 70

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