CY62147DV30L-55ZSXI 512K x 8 SRAM Memory IC – 30ns Access Time, SOIC-28 Package

  • This device provides high-speed static RAM memory, enabling faster data access and improved system performance.
  • Operating at a 55 ns access time, it ensures quick read/write cycles essential for timing-critical applications.
  • The compact LFCSP package reduces board space, making it suitable for designs with limited physical area.
  • Ideal for embedded systems requiring reliable memory with low latency to enhance real-time processing.
  • Manufactured under strict quality controls, the CY62147DV30L-55ZSXI offers consistent performance and durability.
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CY62147DV30L-55ZSXI Overview

The CY62147DV30L-55ZSXI is a high-performance 1-Mbit (128K x 8) static RAM designed for industrial and embedded applications requiring fast, reliable memory access. Operating at a 3.0 V power supply with an access time of 55 ns, this SRAM device ensures low latency and stable operation in demanding environments. Featuring a low power consumption profile and a standardized JEDEC 28-pin SOJ package, it offers easy integration into various system designs. This memory solution combines speed, data retention, and robust electrical characteristics ideal for system buffering, caching, and real-time data storage. For detailed sourcing, visit IC Manufacturer.

CY62147DV30L-55ZSXI Technical Specifications

ParameterSpecification
Memory Density1 Mbit (128K x 8 bits)
Access Time55 ns
Supply Voltage (Vcc)2.7 V to 3.6 V (typical 3.0 V)
Operating Temperature Range-40??C to +85??C
Package Type28-pin SOJ
Data Retention Voltage1.5 V (minimum)
Standby Current (ISB1)5 ??A (typical)
Operating Current (ICC)25 mA (typical at 55 ns)
Input/Output Voltage0 V to Vcc

CY62147DV30L-55ZSXI Key Features

  • High-speed 55 ns access time: Enables rapid data retrieval and storage, critical for time-sensitive embedded systems and buffering tasks.
  • Wide operating voltage range (2.7 V to 3.6 V): Provides flexibility in power management and ensures compatibility with various 3 V system environments.
  • Low power consumption: Typical standby current of 5 ??A supports energy-efficient designs, extending system battery life in portable applications.
  • Industrial temperature range (-40??C to +85??C): Guarantees reliable operation in harsh environmental conditions encountered in industrial and automotive sectors.
  • JEDEC standard 28-pin SOJ package: Facilitates straightforward PCB layout and compatibility with existing manufacturing processes.

CY62147DV30L-55ZSXI Advantages vs Typical Alternatives

This SRAM device offers a competitive edge in terms of speed and low power consumption compared to typical memory alternatives. Its 55 ns access time coupled with a low standby current makes it suitable for applications demanding both performance and energy efficiency. The extended industrial temperature range enhances reliability where other devices may fail, making it a dependable choice for industrial and embedded system engineers.

Typical Applications

  • Embedded system memory buffer: Provides fast, reliable temporary data storage for microcontrollers and DSPs, improving overall system throughput.
  • Industrial control systems: Operates reliably under wide temperature conditions for process monitoring and control.
  • Communication equipment: Supports high-speed data caching and buffering in network routers and switches.
  • Portable instrumentation: Low power standby mode extends battery life while maintaining fast data access.

CY62147DV30L-55ZSXI Brand Info

The CY62147DV30L-55ZSXI is a product from a leading IC Manufacturer renowned for its high-quality semiconductor memory solutions. This SRAM part is engineered to meet stringent industrial standards, offering engineers a robust and efficient memory option for various embedded and industrial applications. The brand focuses on delivering reliable, high-performance components with consistent manufacturing quality and comprehensive support.

FAQ

What is the typical operating voltage range for this SRAM?

The device operates typically between 2.7 V and 3.6 V, with a nominal voltage of 3.0 V. This range allows it to be integrated easily into 3 V systems, maintaining stable performance and compatibility.

What is the significance of the 55 ns access time?

The 55 ns access time means the SRAM can retrieve or write data within 55 nanoseconds, enabling fast memory operations. This speed is critical for applications requiring low latency and high data throughput.

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