CY62147DV18LL-70BVIT 1.8V 64Mb SDRAM Memory IC – SOJ-54 Package

  • This device provides high-speed synchronous SRAM functionality, enabling efficient data storage and retrieval in digital systems.
  • Equipped with a 4M-bit memory capacity, it supports substantial data buffering for complex processing tasks.
  • Its 44-pin TSOP package offers a compact footprint, facilitating board-space optimization in dense layouts.
  • Ideal for use in telecommunications equipment where fast memory access enhances data throughput and system responsiveness.
  • Manufactured to meet stringent quality standards, ensuring dependable operation under varied environmental conditions.
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CY62147DV18LL-70BVIT Overview

The CY62147DV18LL-70BVIT is a high-performance 1M-bit (128K x 8) CMOS Static Random Access Memory (SRAM) designed for low-voltage, high-speed applications. Operating at a 1.8 V power supply, it offers fast access times of 70 ns, making it suitable for systems requiring quick data retrieval and storage. Packaged in a compact 48-pin TSOP II, this memory device supports reliable operation with low power consumption, ideal for embedded systems, networking equipment, and industrial control applications. The product combines robust performance with efficient power management, meeting the needs of engineers and sourcing specialists seeking dependable SRAM solutions from IC Manufacturer.

CY62147DV18LL-70BVIT Technical Specifications

ParameterSpecification
Memory Density1M-bit (128K x 8)
TechnologyCMOS SRAM
Operating Voltage1.7 V to 1.95 V (Nominal 1.8 V)
Access Time70 ns
Data I/O Width8 bits
Package Type48-pin TSOP II
Operating Temperature Range-40??C to +85??C
Standby Current3 ??A (typical)
Operating Current30 mA (typical)
Data Retention Voltage1.0 V (minimum)

CY62147DV18LL-70BVIT Key Features

  • Low-Voltage Operation: Supports a 1.8 V power supply, enabling reduced power consumption and compatibility with modern low-voltage systems.
  • Fast Access Time of 70 ns: Ensures rapid data retrieval, critical for high-speed processing and real-time applications.
  • Compact 48-Pin TSOP II Package: Facilitates easy PCB integration while minimizing board space, ideal for dense system designs.
  • Wide Operating Temperature Range: Reliable performance from -40??C to +85??C supports industrial and automotive environments.
  • Low Standby Current: Minimizes power draw during idle periods, enhancing energy efficiency in battery-powered applications.
  • Full Static Operation: Eliminates the need for refresh cycles, simplifying memory controller design and reducing system complexity.

CY62147DV18LL-70BVIT Advantages vs Typical Alternatives

This SRAM device offers significant advantages over traditional memory solutions, notably its low-voltage 1.8 V operation combined with fast 70 ns access times. Its low standby current and compact TSOP II packaging provide enhanced energy efficiency and simplified board layout. The extended temperature range and static operation ensure dependable performance in harsh industrial environments, making it a superior choice for engineers prioritizing power, speed, and reliability.

Typical Applications

  • Embedded Systems: Ideal for microcontroller-based designs that require stable, low-power, and fast SRAM for program and data storage.
  • Networking Equipment: Suitable for buffer memory in routers and switches, where quick access and data integrity are essential.
  • Industrial Control Systems: Supports robust operation under wide temperature conditions, ensuring system reliability in factory automation.
  • Portable Devices: Low power consumption and compact packaging make it effective for battery-operated handheld instruments and data loggers.

CY62147DV18LL-70BVIT Brand Info

Manufactured by a leading IC Manufacturer, the CY62147DV18LL-70BVIT embodies the company??s commitment to delivering advanced semiconductor memory solutions. Known for stringent quality standards and innovative design, this series of SRAM products supports diverse industrial and commercial applications. The brand??s focus on low-voltage, high-speed memory devices ensures compatibility with the latest system architectures, providing engineers with reliable components for optimized system performance and power

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