The CY62147CV30LL-70BAI is a high-performance, low-power static RAM (SRAM) device designed for industrial and embedded system applications requiring fast access times and reliable data retention. This 4M-bit memory offers a 512K x 8 organization, operating at a 70 ns access time to support demanding processing tasks. The device is built with CMOS technology, featuring a low operating voltage of 3.0 V to 3.6 V, making it suitable for power-sensitive applications. Its standby current is optimized for energy-efficient operation, while its JEDEC-standard pinout ensures easy integration into existing system architectures. This SRAM is an ideal choice for engineers and sourcing specialists seeking robust memory solutions with consistent performance. For more detailed information, visit the IC Manufacturer.
CY62147CV30LL-70BAI Technical Specifications
Parameter
Specification
Memory Density
4M-bit (512K x 8)
Access Time
70 ns
Operating Voltage
3.0 V to 3.6 V
Data Retention Voltage
2.0 V (minimum)
Supply Current (Operating)
Max 160 mA
Standby Current
Max 1 mA (TTL inputs)
Package Type
44-pin TSOP II
Temperature Range
0??C to +70??C (Commercial)
Pin Configuration
JEDEC-standard
CY62147CV30LL-70BAI Key Features
Fast 70 ns access time: Enables quick data retrieval, improving system throughput for time-critical applications.
Low-voltage operation: Supports 3.0 V to 3.6 V power supply, which reduces overall power consumption and enhances energy efficiency.
Low standby current: Minimizes power draw during idle states, extending battery life in portable and embedded systems.
JEDEC-standard 44-pin TSOP II package: Simplifies PCB design and ensures compatibility with existing memory sockets.
Wide operating temperature range: Guarantees reliable performance in typical commercial environments (0??C to +70??C).
Data retention at low voltage: Maintains stored information down to 2.0 V, ensuring data integrity during power fluctuations.
CY62147CV30LL-70BAI Advantages vs Typical Alternatives
This SRAM device offers a compelling balance of speed, low power consumption, and ease of integration compared to typical alternatives. Its 70 ns access time delivers faster data handling, while the low operating and standby currents reduce energy costs. The JEDEC-standard pinout and compact TSOP II package streamline system design and minimize board space. Overall, this memory solution provides reliable, high-performance operation well suited for industrial and embedded applications where efficiency and consistency are critical.
Embedded systems requiring fast, volatile memory for buffering and temporary data storage, such as microcontroller-based devices and industrial controllers.
Networking equipment where rapid access to configuration and packet data enhances communication throughput.
Consumer electronics demanding low power consumption combined with high-speed memory access to improve battery life and system responsiveness.
Data acquisition systems that depend on stable and fast SRAM for temporary data caching before processing or storage.
CY62147CV30LL-70BAI Brand Info
The CY62147CV30LL-70BAI is manufactured by Cypress Semiconductor, a renowned leader in high-quality semiconductor memory solutions. Known for its innovation in CMOS SRAM technologies, Cypress delivers reliable and energy-efficient memory devices tailored for industrial and embedded markets. This product embodies Cypress??s commitment to performance, low power consumption, and compliance with industry standards, ensuring seamless integration into a wide range of electronic systems.
FAQ
What is the operating voltage range for this SRAM device
