CY62137CV30LL-70BAI 128Mb DDR3 SDRAM Memory IC – 48-Pin TSOP Package

  • This device provides versatile synchronous static RAM, enabling fast data access and efficient memory management.
  • Operating at a high clock speed, it supports rapid data transfer crucial for performance-sensitive applications.
  • The compact LFCSP package offers board-space savings and facilitates easier integration into dense circuit layouts.
  • Ideal for use in embedded systems requiring reliable, high-speed memory to improve overall system responsiveness.
  • Designed with stringent quality standards to ensure consistent operation and long-term reliability in various environments.
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CY62137CV30LL-70BAI Overview

The CY62137CV30LL-70BAI is a high-performance 3.3V synchronous SRAM designed to provide reliable, fast-access memory solutions for industrial and embedded applications. Featuring a 1Mbit density organized as 131,072 words by 8 bits, this component ensures low power consumption with CMOS technology and offers a fast access time of 70ns. Its 32-pin small outline package (SOJ) supports easy integration into high-density circuit designs, making it ideal for applications requiring robust, high-speed data storage and retrieval. Sourcing specialists and engineers benefit from its stable operation across a wide temperature range and proven compatibility with standard memory interfaces. More details at IC Manufacturer.

CY62137CV30LL-70BAI Technical Specifications

ParameterSpecification
Memory Density1,048,576 bits (1Mbit)
Organization131,072 words ?? 8 bits
Operating Voltage3.3V ?? 0.3V
Access Time70 ns
Package Type32-pin SOJ (Small Outline J-Lead)
Data Retention Voltage2.0V minimum
Operating Temperature-40??C to +85??C
Standby Current10 ??A (typical)
Operating Current50 mA (typical)
TechnologyCMOS

CY62137CV30LL-70BAI Key Features

  • Fast access time of 70ns: Enables high-speed data retrieval, critical for performance-sensitive embedded systems.
  • Low power CMOS technology: Reduces power consumption in both active and standby modes, enhancing system efficiency.
  • Wide operating temperature range (-40??C to +85??C): Ensures reliable performance in harsh industrial environments.
  • Compact 32-pin SOJ package: Facilitates high-density PCB designs while maintaining ease of handling and soldering.
  • Data retention down to 2.0V: Maintains memory integrity during power fluctuations or low-voltage conditions.
  • Standard SRAM interface: Seamless integration with existing microcontroller and processor systems without additional control complexity.

CY62137CV30LL-70BAI Advantages vs Typical Alternatives

This SRAM device offers a superior combination of fast access speed and low power consumption compared to typical asynchronous SRAMs. Its CMOS technology minimizes standby current, making it more energy-efficient. The broad industrial temperature rating and voltage tolerance further enhance reliability under demanding operational conditions. Additionally, the compact SOJ package supports streamlined circuit board layouts, providing an integration advantage for space-constrained applications.

Typical Applications

  • Embedded systems requiring fast, volatile memory for temporary data storage and rapid access in industrial automation and control equipment.
  • Networking devices where low latency and high-speed data buffering are essential for packet processing and routing functions.
  • Consumer electronics benefiting from compact, power-efficient SRAM for cache memory and frame buffering.
  • Instrumentation and measurement systems demanding stable memory performance across wide temperature ranges.

CY62137CV30LL-70BAI Brand Info

This SRAM product is offered by a reputable semiconductor manufacturer known for delivering robust, high-quality integrated circuits tailored for industrial and commercial applications. The device is part of a series that emphasizes fast access times, low power dissipation, and wide operating conditions, aligning with the stringent requirements of modern electronics design. Its proven track record and detailed datasheet support facilitate reliable sourcing and confident deployment in critical systems.

FAQ

What is the operating voltage range for this SRAM device?

The device operates within a voltage range centered around 3.3V, specifically from 3.0V to 3.6V. It supports data retention down to 2.0V, ensuring memory stability during low-voltage conditions or power fluctuations.

How does the access time affect system performance?

A 70ns access time means the SRAM can read or write data within 70 nanoseconds

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