CY62137CV30LL-55BVI Overview
The CY62137CV30LL-55BVI is a high-performance 1M-bit (128K x 8) CMOS static RAM designed for fast access and low power consumption in embedded system applications. Operating with a 3.0V power supply, it offers a 55 ns access time, enabling efficient and reliable data storage in industrial and consumer electronics. Its low standby current of 10 ??A supports power-sensitive applications, while the JEDEC standard 32-pin TSOP II package facilitates easy integration into compact designs. This SRAM is ideal for memory buffering, cache storage, and data retention tasks requiring stable and rapid access. Available with full product support from the IC Manufacturer, it meets stringent quality and performance requirements.
CY62137CV30LL-55BVI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1M-bit (128K x 8) |
| Access Time | 55 ns |
| Operating Voltage | 3.0 V ?? 0.3 V |
| Standby Current | 10 ??A (max) |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 32-pin TSOP II |
| Data I/O Configuration | 8-bit (x8) |
| Power Supply Current (Operating) | 50 mA (max) |
| Data Retention Voltage | 2.0 V (min) |
| Interface | Asynchronous SRAM |
CY62137CV30LL-55BVI Key Features
- Fast 55 ns access time: Enables high-speed data retrieval, critical for time-sensitive embedded applications.
- Low standby current: Minimizes power consumption in idle mode, extending battery life in portable and low-power systems.
- 3.0 V power supply operation: Compatible with modern low-voltage digital circuits, enhancing system integration.
- JEDEC-standard 32-pin TSOP II packaging: Allows for space-efficient PCB layout and easy assembly in compact electronic devices.
- Data retention voltage of 2.0 V: Ensures data integrity during power-down or brown-out conditions.
- Asynchronous operation: Simplifies interface design by eliminating the need for clock signals, improving compatibility with various microcontrollers and processors.
- Wide operating temperature range: Suitable for commercial temperature environments, offering reliable performance in diverse applications.
CY62137CV30LL-55BVI Advantages vs Typical Alternatives
This SRAM provides a balanced combination of fast access time and low power consumption compared to typical alternatives. Its 3.0 V operation reduces power demands versus legacy 5 V parts, while the 32-pin TSOP II package supports compact system designs. The device??s low standby current and data retention features enhance reliability and efficiency, making it well-suited for embedded memory applications where power and space are critical factors.
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Typical Applications
- Embedded system memory buffering where quick data access and low power are essential for system performance and energy efficiency.
- Cache memory in microprocessor-based designs requiring fast and reliable temporary storage of program or data code.
- Industrial control systems needing stable, low-power SRAM for real-time data logging and processing.
- Consumer electronics such as portable devices that benefit from compact memory modules with low standby current.
CY62137CV30LL-55BVI Brand Info
This static RAM is manufactured under the quality standards of a leading semiconductor supplier specializing in CMOS memory solutions. The CY62137CV30LL-55BVI is part of a product line known for robust performance, low power consumption, and high integration flexibility. The product benefits from comprehensive technical documentation, application support, and assured reliability for industrial and commercial electronics development.
FAQ
What is the typical operating voltage range for this SRAM?
The device operates typically at 3.0 V with a tolerance of ??0.3 V, making it compatible with modern low-voltage digital circuits and ensuring stable operation within this voltage window.
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