CY62137CV25LL-55BVI Overview
The CY62137CV25LL-55BVI is a high-performance 4Mbit (512K x 8) static RAM device designed for fast access and low power consumption. Operated at 2.7V to 3.6V, this 55ns access time SRAM delivers reliable memory storage solutions optimized for embedded systems and industrial applications. Featuring low standby current and a fast cycle time, it supports efficient data handling in resource-constrained environments. Its 32-pin TSOP II package ensures compact integration on space-sensitive circuit boards. Designed with CMOS technology, this device offers high-speed operation with robust electrical characteristics, making it suitable for applications requiring stable and quick data access. For more details, visit IC Manufacturer.
CY62137CV25LL-55BVI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 4Mbit (512K x 8) |
| Access Time | 55 ns |
| Operating Voltage | 2.7 V to 3.6 V |
| Data Retention Voltage | 1.5 V (typical) |
| Operating Temperature Range | -40??C to +85??C |
| Package Type | 32-pin TSOP II |
| Standby Current | 5 ??A (max) |
| Operating Current | 50 mA (max) |
| Data I/O Configuration | 8-bit |
| Technology | CMOS |
CY62137CV25LL-55BVI Key Features
- High-Speed Access: 55 ns access time ensures rapid data retrieval, crucial for time-sensitive applications requiring real-time processing.
- Wide Voltage Range: Operates between 2.7 V and 3.6 V, providing flexibility across various system power environments and enhancing compatibility.
- Low Standby Power Consumption: Typical standby current of 5 ??A reduces power usage in idle states, extending battery life in portable or embedded systems.
- Compact TSOP II Package: The 32-pin TSOP II form factor allows space-efficient PCB layouts, ideal for high-density memory applications.
- Robust Temperature Tolerance: Supports industrial temperature range (-40??C to +85??C), ensuring reliability in harsh operating conditions.
- CMOS Technology: Enables low power dissipation and high noise immunity, improving overall system performance and reliability.
CY62137CV25LL-55BVI Advantages vs Typical Alternatives
This SRAM device delivers superior speed and low power consumption compared to typical alternatives, making it ideal for industrial and embedded applications. Its wide voltage operating range and low standby current offer enhanced energy efficiency and flexibility. Additionally, the compact 32-pin TSOP II package facilitates easier PCB integration without compromising performance or reliability, providing a competitive edge in space-constrained designs.
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Typical Applications
- High-speed cache memory in embedded systems, where rapid data access and low latency are critical to performance and system responsiveness.
- Industrial control systems requiring reliable memory solutions capable of operating under extended temperature ranges and varying power conditions.
- Networking equipment that demands fast buffering and data storage to maintain throughput and communication integrity.
- Portable electronic devices benefiting from low standby current to maximize battery life while maintaining quick memory access.
CY62137CV25LL-55BVI Brand Info
This static RAM product is part of a series known for robust performance in industrial and embedded applications. It is designed and manufactured adhering to stringent quality standards to ensure high reliability and efficiency. The device leverages mature CMOS technology and a compact TSOP II package to meet diverse system requirements, delivering proven performance with consistent electrical characteristics. Ideal for engineers and sourcing specialists focused on dependable memory solutions, this product aligns with industry demands for speed, power efficiency, and integration flexibility.
FAQ
What is the operating voltage range for this SRAM device?
The device operates within a voltage range of 2.7 V to 3.6 V, allowing it to be used in most standard 3.3 V systems with stable performance and reliable data retention.