CY62137CV18LL-70BAI Overview
The CY62137CV18LL-70BAI is a high-performance 1M x 8-bit static RAM (SRAM) device designed for industrial and embedded applications requiring fast, reliable, and low-power memory solutions. Operating at a 70ns access time, this 8-bit wide memory supports single 3.3V power supply operation, ensuring compatibility with modern low-voltage systems. Its CMOS architecture contributes to minimal power consumption during both active and standby modes. The device??s 32-pin TSOP II package offers a compact footprint suitable for space-constrained designs. Trusted for its stable operation and data retention, this SRAM is ideal for buffering, cache memory, and data logging tasks. For detailed technical resources and support, visit IC Manufacturer.
CY62137CV18LL-70BAI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 1M x 8 bits (1 Megabit) |
| Access Time | 70 ns |
| Operating Voltage | 3.3 V ?? 0.3 V |
| Power Consumption (Active) | 45 mA (typical) |
| Power Consumption (Standby) | 50 ??A (typical) |
| Package Type | 32-pin Thin Small Outline Package (TSOP II) |
| Operating Temperature Range | 0??C to +70??C |
| Data Retention Voltage | 2.0 V (minimum) |
| Standby Mode | TTL compatible |
CY62137CV18LL-70BAI Key Features
- Fast 70ns access time: Enables swift data retrieval and storage, improving system responsiveness in high-speed applications.
- 3.3V single power supply operation: Simplifies power management in low-voltage embedded systems and reduces overall power consumption.
- Low active and standby power: CMOS technology ensures energy efficiency, extending battery life in portable or power-sensitive equipment.
- Compact 32-pin TSOP II package: Facilitates high-density PCB layouts without compromising thermal dissipation or signal integrity.
- Wide operating temperature range (0??C to +70??C): Suitable for commercial-grade applications with reliable performance under typical environmental conditions.
- Data retention at low voltage: Maintains memory contents down to 2.0 V, supporting data integrity during voltage fluctuations.
CY62137CV18LL-70BAI Advantages vs Typical Alternatives
This SRAM device offers a competitive edge through its optimized 70ns access time combined with low-voltage 3.3 V operation, delivering faster performance and lower power consumption compared to traditional 5 V SRAMs. Its CMOS design enhances energy efficiency and minimizes heat generation, vital for compact and thermally sensitive systems. The TSOP II package supports space-saving PCB layouts while maintaining signal integrity, making it a reliable choice for modern embedded memory solutions.
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Typical Applications
- Cache memory in microprocessor-based systems requiring rapid access to frequently used data in embedded controllers or communication devices.
- Buffer memory for high-speed data transfer and temporary data storage in industrial automation equipment.
- Data logging applications where stable retention and quick access times are critical for system reliability.
- General-purpose static RAM usage in networking hardware, instrumentation, and consumer electronics.
CY62137CV18LL-70BAI Brand Info
The CY62137CV18LL-70BAI is manufactured by a leading IC supplier specializing in high-quality semiconductor memory components. The product line emphasizes reliability, performance, and integration ease for industrial and embedded markets. This SRAM variant reflects the company??s commitment to meeting rigorous industry standards with a focus on low-voltage operation and compact packaging. Comprehensive datasheets and application notes are available to facilitate seamless integration into diverse system designs.