CY62137BV18LL-70BAI Overview
The CY62137BV18LL-70BAI is a high-performance, low-power static RAM (SRAM) device designed for fast and reliable data storage in embedded systems. Featuring a 1M x 18-bit organization and a 70 ns access time, it supports efficient memory operations with minimal latency. This SRAM is optimized for industrial applications requiring stable operation across a wide temperature range and low power consumption. Packaged in a compact 48-pin TSOP II form factor, it ensures easy integration into space-constrained designs. The device is ideal for engineers and sourcing specialists looking for robust, high-speed memory solutions. For more information, visit IC Manufacturer.
CY62137BV18LL-70BAI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1M words ?? 18 bits |
| Access Time | 70 ns |
| Operating Voltage | 5 V ?? 10% |
| Standby Current | 60 mA (typical) |
| Operating Temperature Range | 0??C to +70??C |
| Package Type | 48-pin TSOP II |
| Data Retention Voltage | 2.0 V (minimum) |
| Power Supply Current (Operating) | 120 mA (typical) |
| Data Input/Output Type | TTL compatible |
| Write Cycle Time | 100 ns (maximum) |
CY62137BV18LL-70BAI Key Features
- High-Speed Access: 70 ns access time enables rapid data retrieval, improving overall system performance in time-critical applications.
- Wide Data Bus: The 18-bit data width supports efficient word-level data handling, beneficial for systems requiring wide memory access.
- Low Power Consumption: Typical standby current of 60 mA reduces energy usage, extending operational life in power-sensitive environments.
- Robust Voltage Range: Operating voltage tolerance of 5 V ?? 10% ensures stable performance under varying supply conditions.
- Compact Packaging: The 48-pin TSOP II package minimizes board space, facilitating integration into dense layouts.
- Reliable Data Retention: Maintains data integrity down to 2.0 V during power-down states, supporting safe data preservation.
- Standard TTL Interface: Ensures compatibility with a wide range of logic families, simplifying system design.
CY62137BV18LL-70BAI Advantages vs Typical Alternatives
This SRAM device offers superior access speed and wider data width compared to typical 16-bit SRAMs, enhancing throughput for complex data applications. Its low standby current and wide voltage tolerance improve energy efficiency and reliability in industrial environments. The compact TSOP II packaging further supports space-saving designs, making it advantageous for embedded systems requiring fast, stable, and power-conscious memory solutions.
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Typical Applications
- Embedded Control Systems: Ideal for microprocessor and microcontroller memory expansion where high-speed SRAM supports real-time data processing and program execution.
- Networking Equipment: Provides fast buffer storage for data packets, improving communication throughput and device responsiveness.
- Industrial Automation: Supports reliable data storage in harsh environments, ensuring consistent operation in factory automation and control systems.
- Data Acquisition Systems: Enables quick access to captured sensor data for processing and analysis in measurement instruments.
CY62137BV18LL-70BAI Brand Info
This product is manufactured under the brand specialized in high-reliability semiconductor memory solutions. The CY62137BV18LL-70BAI represents the brand??s commitment to delivering SRAM devices that combine speed, power efficiency, and robust operation. Designed to meet the stringent requirements of industrial and embedded applications, this SRAM model benefits from rigorous quality control and industry-standard packaging to ensure seamless integration and long-term performance.
FAQ
What is the access time of this SRAM device?
The access time is 70 nanoseconds, which allows for quick data retrieval and supports high-performance applications requiring fast memory access.
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