CY62128ELL-45SXI SRAM Memory IC – 128K x 8, 45ns, SOIC-28 Package

  • Provides fast and reliable synchronous static RAM storage for improved data access performance in embedded systems.
  • Operates with a specific access time to ensure timely data retrieval, critical for maintaining system responsiveness.
  • Features a compact LFCSP package, enabling board-space savings in dense circuit designs.
  • Ideal for buffering data in communication devices, enhancing throughput and reducing latency during data transfers.
  • Built to meet rigorous quality standards, ensuring consistent operation under varying environmental conditions.
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CY62128ELL-45SXI Overview

The CY62128ELL-45SXI is a high-performance static RAM (SRAM) device designed for fast, reliable data storage in industrial and embedded systems. Featuring a 128K x 8-bit memory organization, it delivers low access times with a 45 ns cycle, enabling swift data retrieval and processing. This SRAM supports a 5 V power supply with low power consumption modes, making it suitable for power-sensitive applications. Packaged in a compact SOJ form factor, it offers easy integration into space-constrained designs. Engineers and sourcing specialists will find this memory device ideal for applications requiring stable, high-speed, and non-volatile storage solutions. For more information, visit IC Manufacturer.

CY62128ELL-45SXI Technical Specifications

ParameterSpecification
Memory Size128K x 8 bits (1,048,576 bits)
Access Time45 ns
Operating Voltage5 V ?? 10%
Standby Current8 mA (typical)
Operating Temperature Range0??C to +70??C
Package Type24-pin SOJ (Small Outline J-Lead)
Data Retention Voltage2 V (minimum)
Input/Output ConfigurationTTL compatible
Interface TypeAsynchronous SRAM

CY62128ELL-45SXI Key Features

  • Fast 45 ns access time: Enables rapid data read/write cycles, improving system throughput and responsiveness in time-critical applications.
  • Low power standby mode: Reduces power consumption during idle periods, extending battery life and lowering thermal dissipation.
  • 5 V single power supply operation: Simplifies power design and ensures compatibility with legacy systems operating at standard voltage levels.
  • Compact 24-pin SOJ package: Facilitates high-density PCB layouts and easy socket or surface mount integration.
  • TTL compatible inputs and outputs: Ensures seamless interface with common logic families for straightforward system integration.
  • Wide operating temperature range: Guarantees reliable performance in typical commercial environments, supporting industrial-grade applications.

CY62128ELL-45SXI Advantages vs Typical Alternatives

This SRAM device provides a balanced combination of fast access times and low standby power consumption compared to typical asynchronous memories. Its 5 V operation and TTL compatibility allow for straightforward integration into existing industrial systems. The compact SOJ package supports space-efficient design without sacrificing performance. These advantages make it a reliable and cost-effective choice for engineers seeking stable, high-speed memory solutions with proven industrial-grade reliability.

Typical Applications

  • Embedded control systems requiring fast, volatile memory for data buffering and real-time processing, where low latency and stable operation are critical.
  • Networking equipment storing temporary routing tables and packet buffers to ensure quick access and efficient data handling.
  • Industrial automation devices that rely on reliable memory modules to maintain operational data integrity during power fluctuations.
  • Consumer electronics that require compact, low-power SRAM for cache memory and temporary data storage in embedded applications.

CY62128ELL-45SXI Brand Info

The CY62128ELL-45SXI is a product of a reputable semiconductor manufacturer known for delivering high-quality memory components tailored for industrial and embedded applications. This SRAM module reflects the brand??s commitment to performance, reliability, and ease of use, backed by rigorous quality control and extensive technical support. It is widely adopted by engineers and sourcing professionals seeking proven memory solutions that meet demanding system requirements.

FAQ

What is the memory organization and capacity of this SRAM device?

The device features a memory organization of 128K by 8 bits, resulting in a total capacity of 1,048,576 bits. This configuration is ideal for applications requiring compact yet sufficient volatile storage for fast data access.

What is the significance of the 45 ns access time?

The 45 nanosecond access time represents the maximum delay between a memory address input and the corresponding data output. This fast timing enables high-speed read and write operations, critical for real-time computing and buffering tasks.

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