CY62128DV30LL-55SXIT 128K x 8 SRAM Memory IC – 30ns Access, 44-Pin SOJ Package

  • This device serves as a high-speed static RAM, enabling fast data access and efficient memory management in digital systems.
  • Featuring a specified access time, it ensures timely data retrieval critical for performance-sensitive applications.
  • The compact package reduces board space requirements, facilitating integration into dense circuit designs.
  • Ideal for embedded systems, it supports quick data storage and retrieval, enhancing overall system responsiveness.
  • Manufactured under stringent quality controls, it delivers dependable operation across varied environmental conditions.
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CY62128DV30LL-55SXIT Overview

The CY62128DV30LL-55SXIT is a high-performance 128K x 8-bit low-power SRAM device optimized for embedded system applications. Featuring a 3.0 V power supply range and a fast access time of 55 ns, it provides reliable and efficient data storage for industrial and consumer electronics. Designed with low standby current and advanced CMOS technology, this memory module supports extended battery life and thermal stability. Its compact 32-pin TSOP II package ensures easy integration into space-constrained designs. Available from IC Manufacturer, this SRAM solution is ideal for engineers seeking robust, high-speed volatile memory in a small form factor.

CY62128DV30LL-55SXIT Technical Specifications

ParameterSpecification
Memory Size128K x 8 bits (1 Megabit)
Access Time55 ns
Supply Voltage2.7 V to 3.6 V (typical 3.0 V)
Standby Current5 ??A (typical)
Operating Temperature Range-40??C to +85??C
Package Type32-pin TSOP II
InterfaceAsynchronous SRAM
Data Retention Voltage2.0 V (typical)

CY62128DV30LL-55SXIT Key Features

  • High-Speed Access: With a 55 ns access time, it enables quick data retrieval, improving overall system responsiveness in time-critical applications.
  • Low Power Consumption: The device features a typical standby current of 5 ??A, significantly extending battery life in portable and embedded systems.
  • Wide Operating Voltage: Operates reliably over a 2.7 V to 3.6 V supply range, offering design flexibility for various power environments.
  • Compact Footprint: The 32-pin TSOP II package supports high-density board layouts, saving valuable PCB space in compact electronic designs.

CY62128DV30LL-55SXIT Advantages vs Typical Alternatives

Compared to typical SRAM solutions, this device offers a superior balance of speed, power efficiency, and operating voltage flexibility. Its low standby current enhances battery-powered device longevity, while the fast 55 ns access time ensures high data throughput. The compact TSOP II package allows for easier integration into space-limited industrial and consumer electronics, providing a reliable and cost-effective memory option.

Typical Applications

  • Embedded systems requiring fast, low-power volatile memory for data buffering and temporary storage in industrial automation and control equipment.
  • Portable electronic devices where extended battery life is critical, leveraging low standby power consumption and stable voltage operation.
  • Networking hardware that demands rapid access memory for efficient data processing and packet buffering.
  • Consumer electronics such as digital cameras and handheld devices needing reliable high-speed SRAM for system memory expansion.

CY62128DV30LL-55SXIT Brand Info

This SRAM module is offered by a leading semiconductor manufacturer known for high-quality memory products tailored to industrial and embedded systems. The product reflects the company??s commitment to delivering reliable, energy-efficient, and high-speed memory solutions that meet stringent performance and environmental requirements. Designed with advanced CMOS technology, the product portfolio provides engineers with versatile options for integrating fast SRAM into diverse electronic applications.

FAQ

What is the operating voltage range of the CY62128DV30LL-55SXIT?

The device operates within a supply voltage range of 2.7 V to 3.6 V, with a typical nominal voltage of 3.0 V. This wide range supports varied power supply conditions while maintaining stable performance.

How fast is the memory access time for this SRAM?

The SRAM features a fast access time of 55 nanoseconds, which enables rapid read and write operations suitable for performance-sensitive applications.

What package type does this SRAM come in?

This product is housed

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