CY62128DV30L-55ZRI 128K x 8 SRAM Memory IC – 28-Pin SOJ Package

CY62128DV30L-55ZRI Overview

The CY62128DV30L-55ZRI is a high-performance 128 Kbit static RAM (SRAM) device optimized for industrial and embedded applications. Operating at a 3.0 V supply voltage with a fast access time of 55 ns, it delivers reliable, low-power memory solutions for engineers requiring quick data storage and retrieval. This non-volatile SRAM supports robust data integrity with its asynchronous architecture, making it suitable for applications demanding stable, high-speed volatile memory. Designed with a compact 28-pin SOJ package, it enables easy integration into various systems requiring efficient and dependable SRAM performance. For more details, visit IC Manufacturer.

CY62128DV30L-55ZRI Technical Specifications

CY62128DV30L-55ZRI Key Features

• Fast Access Time: 55 ns access speed ensures rapid data retrieval and write cycles, reducing system latency in high-speed computing environments.
• Wide Operating Voltage: Supports 2.7 V to 3.6 V, allowing stable operation in varied power supply conditions typical in industrial electronics.
• Low Power Consumption: Typical operating current of 9 mA optimizes energy efficiency, ideal for battery-powered and embedded systems.
• Robust Temperature Range: Extended industrial temperature range (-40??C to +85??C) guarantees reliable performance in harsh environments.
• Compact SOJ Package: 28-pin SOJ form factor enables high-density mounting and integration on space-constrained PCBs.
• TTL Compatible I/O: Simplifies interfacing with standard logic circuits ensuring broad system compatibility.
• Data Retention Capability: Maintains data integrity down to 1.5 V, enhancing reliability during power fluctuations.

CY62128DV30L-55ZRI Advantages vs Typical Alternatives

This SRAM device offers superior speed and low power consumption compared to typical memory alternatives, making it ideal for applications requiring fast, reliable volatile storage. Its wide operating voltage range and industrial temperature rating provide greater flexibility and robustness in challenging environments. The compact SOJ package further enhances integration efficiency, ensuring a dependable solution for embedded systems where space and power constraints are critical.

Typical Applications

• Embedded memory in industrial automation systems requiring fast and reliable SRAM to store program code or temporary data with stable operation under industrial temperature ranges.
• Buffer memory for networking equipment, enabling high-speed data handling and reduced latency in communication devices.
• Data storage in portable instrumentation and handheld devices benefiting from low power consumption and compact packaging.
• Cache memory in control systems where fast access and data integrity during power fluctuations are critical.

CY62128DV30L-55ZRI Brand Info

The CY62128DV30L-55ZRI is part of a well-established line of SRAM products designed to meet rigorous industrial and embedded system requirements. Manufactured with a focus on quality and reliability, this memory device is engineered to deliver consistent performance in various applications where fast, low-power volatile memory is essential. Its design incorporates robust voltage tolerance and temperature resilience, reflecting the brand??s commitment to supporting demanding electronic system designs.

FAQ

What is the operating voltage range of this SRAM?

The device operates reliably within a supply voltage range of 2.7 V to 3.6 V, with a nominal voltage of 3.0 V. This wide voltage tolerance allows it to function effectively in systems with varying power supply levels.

How fast is the access time of this memory?

This SRAM