CY62128DV30L-55ZI 128Kb SRAM Memory IC – Low Power, SOIC-28 Package

  • Offers high-speed static RAM storage, enabling fast data access for system performance improvement.
  • Features a 3.3V power supply, ensuring compatibility with standard digital circuits and stable operation.
  • Encased in a compact SOJ package, minimizing board space and supporting dense circuit designs.
  • Ideal for embedded systems requiring quick, reliable memory access to enhance real-time processing.
  • Manufactured to meet strict quality standards, providing dependable performance in demanding environments.
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CY62128DV30L-55ZI Overview

The CY62128DV30L-55ZI is a 128K x 8-bit low-voltage CMOS Static RAM designed for high-performance embedded memory applications. Operating at a supply voltage of 3.0V, it delivers fast access times of 55 nanoseconds, making it suitable for systems requiring quick data retrieval and storage. This memory device offers low power consumption and a compact 32-pin TSOP package, facilitating easy integration into space-constrained industrial and consumer electronics. With its robust design and stable operation, the product ensures reliable data retention, ideal for applications demanding consistent performance. For more details, visit IC Manufacturer.

CY62128DV30L-55ZI Technical Specifications

ParameterSpecification
Memory Organization128K x 8 bits
Access Time55 ns
Supply Voltage3.0 V ?? 0.3 V
Operating Temperature Range-40??C to +85??C
Package Type32-pin TSOP
Input/Output Configuration8-bit data bus
Power Consumption (Operating)Low power CMOS
Standby CurrentMinimal for battery-powered applications

CY62128DV30L-55ZI Key Features

  • Fast 55 ns access time: Enables quick data read and write cycles, improving overall system speed and responsiveness.
  • Low-voltage 3.0V operation: Reduces power consumption, extending battery life in portable and embedded systems.
  • Static RAM architecture: Eliminates the need for refresh cycles, simplifying memory controller design and enhancing reliability.
  • Compact 32-pin TSOP package: Saves PCB space and facilitates integration in dense circuit layouts.
  • Wide operating temperature range (-40??C to +85??C): Suitable for industrial and automotive environments requiring stable performance under harsh conditions.

CY62128DV30L-55ZI Advantages vs Typical Alternatives

This device offers superior speed and low power consumption compared to typical SRAM alternatives. Its 3.0V operation reduces energy demands while maintaining fast 55 ns access times, which is critical for high-performance industrial applications. The static RAM design eliminates refresh overhead seen in DRAM, enhancing reliability and simplifying system design. Its compact TSOP packaging allows for efficient PCB space usage, making it preferable for modern embedded systems.

Typical Applications

  • Embedded systems memory: Ideal for storing critical program code and data in microcontroller-based devices requiring fast and reliable access.
  • Industrial control equipment: Provides stable, low-power memory solutions in harsh environments with temperature variations.
  • Communications devices: Supports buffering and temporary data storage in network and telecom hardware.
  • Consumer electronics: Enhances performance in devices such as handhelds and portable instruments where power efficiency and size are key.

CY62128DV30L-55ZI Brand Info

The CY62128DV30L-55ZI is part of a well-established product line known for delivering dependable static RAM solutions tailored to embedded and industrial applications. Manufactured with advanced CMOS technology, this memory device reflects the brand’s commitment to high reliability, low power consumption, and consistent performance across a broad temperature range. Trusted by engineers worldwide, it supports diverse applications requiring fast, non-volatile data storage within tight form factors.

FAQ

What is the operating voltage range of this SRAM device?

This SRAM operates at a nominal voltage of 3.0V with a tolerance of ??0.3V, allowing it to function efficiently within a 2.7V to 3.3V supply range. This low-voltage operation is suitable for power-sensitive applications and helps reduce overall system power consumption.

How fast is the access time for data read and write operations?

The device features a 55-nanosecond access time, enabling rapid read and write cycles. This speed supports high-performance computing

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