The CY62128BNLL-70SI is a high-performance 128K x 8-bit Static RAM (SRAM) designed for industrial and commercial applications requiring fast, reliable memory storage. Operating at a 70 ns access time, this low-power CMOS SRAM provides stable and efficient data retention with a 3.3 V power supply. Its 28-pin SOJ package supports easy PCB integration while ensuring signal integrity and minimal noise. With optimized power consumption and robust performance, this SRAM is ideal for embedded systems, buffer memory, and cache applications. Designed and manufactured by IC Manufacturer, it meets strict quality standards and industrial reliability requirements.
CY62128BNLL-70SI Technical Specifications
Parameter
Specification
Memory Size
128K x 8 bits
Access Time
70 ns
Operating Voltage
3.0 V to 3.6 V (typical 3.3 V)
Power Consumption (Operating)
30 mA (typical)
Power Consumption (Standby)
10 ??A (typical)
Package Type
28-pin Small Outline J-lead (SOJ)
Data Retention Voltage
2.0 V (min)
Operating Temperature Range
0??C to +70??C
Interface
Asynchronous SRAM
CY62128BNLL-70SI Key Features
Fast 70 ns access time: Enables high-speed data read/write cycles, enhancing overall system performance in time-critical applications.
Low power consumption: Both active and standby currents are minimized to extend battery life and reduce thermal dissipation in embedded designs.
Wide voltage range support: Operates reliably from 3.0 V to 3.6 V, providing flexibility for various 3.3 V system architectures.
Industrial temperature rating: Ensures stable operation across 0??C to +70??C, suitable for commercial and industrial environments.
28-pin SOJ package: Supports efficient PCB layout and simplified mounting, reducing manufacturing complexity and cost.
Asynchronous SRAM interface: Simplifies integration into existing designs without requiring complex timing control.
Data retention down to 2.0 V: Maintains memory integrity during low-power or power-fail conditions.
CY62128BNLL-70SI Advantages vs Typical Alternatives
This SRAM device stands out by combining fast 70 ns access speed with low active and standby power consumption, which is superior to many traditional SRAMs operating at higher voltages or slower speeds. Its wide voltage tolerance and standard SOJ packaging facilitate easier integration and enhanced reliability. Compared to typical alternatives, it offers a balanced trade-off between speed, power efficiency, and industrial-grade robustness, making it a preferred choice for embedded memory needs.
Embedded system memory buffers: Provides quick access and reliable storage for microprocessor data handling, enhancing system responsiveness and throughput.
Cache memory in communication devices: Supports fast temporary data storage to improve data flow and reduce latency in network equipment.
Data acquisition systems: Enables rapid sampling and storage of sensor inputs, critical for real-time processing and analysis.
Industrial control units: Maintains stable memory performance under varying voltage and temperature conditions common in factory automation.
CY62128BNLL-70SI Brand Info
This SRAM component is offered by a leading semiconductor manufacturer known for delivering reliable, high-quality integrated circuits tailored to industrial and commercial markets. Engineered with precision CMOS technology, the model provides consistent performance, durability, and compatibility with a wide range of system architectures. The brand emphasizes rigorous testing and quality assurance to meet demanding customer requirements for memory solutions in embedded and industrial applications.
FAQ
What is the typical operating voltage for this SRAM device
