CY62128BNLL-55ZXI Overview
The CY62128BNLL-55ZXI is a high-performance 128Kb (16K x 8) static RAM device designed to deliver fast access times and low power consumption. Operating at a 55 ns access speed, this SRAM offers reliable data storage with a single 5V power supply, making it suitable for a diverse range of industrial and embedded applications. The product features a standard 28-pin SOJ package with a fully static architecture, eliminating the need for refresh cycles. Engineers and sourcing specialists can leverage this device for applications requiring fast, stable memory in compact form factors. For detailed product sourcing and support, visit IC Manufacturer.
CY62128BNLL-55ZXI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 128 Kbit (16,384 words ?? 8 bits) |
| Access Time | 55 ns |
| Operating Voltage | 5 V ??10% |
| Package Type | 28-pin SOJ (Small Outline J-Lead) |
| Operating Temperature Range | 0??C to +70??C |
| Data Retention Voltage | 2.0 V (minimum) |
| Power Supply Current (Operating) | 30 mA (typical) |
| Standby Current (TTL inputs) | 100 ??A (maximum) |
| Data I/O Pins | 8 (D0 to D7) |
| Address Pins | 14 (A0 to A13) |
CY62128BNLL-55ZXI Key Features
- Fast 55 ns access time: Enables quick data retrieval and enhances system performance in time-sensitive applications.
- Low operating power: Typically consumes 30 mA during operation, supporting energy-efficient designs in portable or battery-powered devices.
- Fully static design: Eliminates the need for refresh cycles, simplifying system architecture and improving reliability.
- Wide operating voltage range: Supports stable operation at standard 5 V levels with tolerance for ??10%, ensuring compatibility with diverse power sources.
- Standard 28-pin SOJ package: Provides a compact footprint with ease of PCB integration while maintaining robust electrical performance.
- Data retention at low voltage: Maintains memory contents down to 2.0 V, protecting data integrity during power interruptions.
- Industrial temperature range: Operates reliably from 0??C to +70??C, suitable for many commercial and industrial environments.
CY62128BNLL-55ZXI Advantages vs Typical Alternatives
This SRAM device offers a balanced combination of speed, low power consumption, and fully static operation compared to typical dynamic RAM alternatives that require refresh cycles. Its 55 ns access time is faster than many competing static RAMs, while the low standby current and data retention voltage enhance reliability and efficiency. The standardized 28-pin SOJ package simplifies system integration, making it a preferred choice for engineers seeking dependable, fast, and compact SRAM solutions.
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Typical Applications
- Embedded systems memory buffer: Ideal for applications requiring fast and reliable temporary data storage, such as microcontroller interfacing and data caching.
- Industrial control equipment: Provides stable memory performance under varying environmental conditions and power supply fluctuations.
- Communication devices: Supports fast data processing and buffering in networking hardware and telecommunication modules.
- Consumer electronics: Suitable for use in digital cameras, printers, and other devices requiring quick access to volatile memory.
CY62128BNLL-55ZXI Brand Info
The CY62128BNLL-55ZXI is part of a well-established product line renowned for its high-quality static RAM offerings. Designed to meet rigorous industrial standards, this memory component reflects the manufacturer??s commitment to performance, reliability, and ease of integration. It is widely adopted in sectors where dependable memory solutions are critical, backed by comprehensive datasheets and technical support to assist engineers and sourcing professionals throughout the product lifecycle.
FAQ
What is the access time of this SRAM?
The device features a 55 nanosecond access time, enabling rapid read and write operations. This
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