CY62128BLL-55ZRIT 128K x8 SRAM Memory IC, Low Power, SOIC-28 Package

  • Provides high-speed static RAM storage to enhance data access and system performance in embedded applications.
  • Features a 55 ns access time, enabling faster read/write cycles critical for time-sensitive operations.
  • Packaged in a compact LCC form factor, saving board space and simplifying integration into dense layouts.
  • Ideal for buffering and caching in communication devices, improving data throughput and responsiveness.
  • Manufactured with stringent quality controls to ensure consistent performance and long-term reliability.
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CY62128BLL-55ZRIT Overview

The CY62128BLL-55ZRIT is a high-performance, low-power static RAM (SRAM) designed specifically for embedded system applications requiring fast data access and reliable memory storage. Featuring a density of 128 Kbit organized as 16K x 8 bits, this device operates at a 55 ns access time, ensuring quick read and write cycles. Its 3.3 V power supply and low standby current contribute to energy-efficient operation, making it ideal for industrial and communication systems. The compact 32-pin TSOP II package supports easy integration into space-constrained designs. For more detailed product information, visit IC Manufacturer.

CY62128BLL-55ZRIT Technical Specifications

ParameterSpecification
Memory Density128 Kbit (16K x 8 bits)
Access Time55 ns
Operating Voltage3.3 V ?? 0.3 V
Standby Current12 ??A (typical)
Operating Temperature Range0??C to +70??C
Package Type32-pin TSOP II (Type I)
Data Retention Voltage2.0 V (minimum)
InterfaceAsynchronous SRAM

CY62128BLL-55ZRIT Key Features

  • Fast Access Time: 55 ns access time enables rapid data retrieval, enhancing system performance in time-critical applications.
  • Low Power Consumption: Operates at 3.3 V with a typical standby current of 12 ??A, reducing power usage for battery-powered or energy-sensitive designs.
  • Standard Asynchronous Interface: Simplifies integration with microprocessors and controllers without requiring additional control signals.
  • Compact TSOP II Package: The 32-pin Type I package provides a small footprint, facilitating high-density board layouts.
  • Reliable Data Retention: Maintains data integrity with a low data retention voltage of 2.0 V, supporting safe data storage during power fluctuations.

CY62128BLL-55ZRIT Advantages vs Typical Alternatives

This SRAM offers a balanced combination of low power, fast access speed, and compact packaging, outperforming typical alternatives that may operate at higher voltages or slower speeds. Its asynchronous interface allows straightforward CPU compatibility without complex timing requirements, enhancing overall system reliability and reducing design complexity. The low standby current also makes it favorable for power-sensitive industrial and embedded applications.

Typical Applications

  • Embedded Systems: Provides fast, reliable volatile memory for firmware storage and execution in microcontroller-based designs requiring quick data access and low power consumption.
  • Networking Equipment: Supports buffering and temporary data storage in routers, switches, and communication modules where speed and stability are critical.
  • Industrial Control Systems: Offers dependable memory for real-time data processing and system monitoring in harsh environments.
  • Consumer Electronics: Ideal for handheld devices and portable instruments that benefit from low power SRAM with compact packaging.

CY62128BLL-55ZRIT Brand Info

The CY62128BLL-55ZRIT is part of a well-established product line from a leading semiconductor manufacturer known for delivering reliable, high-quality memory solutions. This SRAM series is engineered to meet the rigorous demands of industrial and embedded applications, providing consistent performance and longevity. The brand??s commitment to stringent quality control and extensive testing ensures that this memory device meets industry standards for durability and electrical characteristics.

FAQ

What is the operating voltage range for this SRAM?

The device operates at a nominal voltage of 3.3 V with an allowable range of ??0.3 V. This ensures compatibility with standard 3.3 V logic systems and supports low power operation.

How fast is the access time of this memory?

This SRAM features a 55 ns access time, which enables rapid read and write cycles, suitable for applications requiring quick memory access and high-speed data processing.

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