CY62127DV30LL-70ZIT 128K x 8 CMOS SRAM Memory – 28-Pin SOJ Package

CY62127DV30LL-70ZIT Overview

The CY62127DV30LL-70ZIT is a high-performance CMOS Static Random Access Memory (SRAM) device designed for applications requiring fast access times and low power consumption. Offering a 1Mbit density organized as 131,072 words by 8 bits, this SRAM supports a 3.0V power supply, ensuring compatibility with modern low-voltage systems. Its 70ns access time guarantees rapid data retrieval, making it suitable for embedded systems, data buffering, and cache memory applications. The device features a 28-pin SOJ package that facilitates easy integration into various PCB layouts. For detailed technical support and sourcing, visit IC Manufacturer.

CY62127DV30LL-70ZIT Technical Specifications

CY62127DV30LL-70ZIT Key Features

• Fast 70 ns Access Time: Enables rapid data retrieval, reducing system latency in memory-intensive applications.
• Low Voltage Operation at 3.0 V: Supports modern low-power designs, enhancing energy efficiency and extending battery life in portable devices.
• Low Standby Current: Minimizes power consumption during idle periods, critical for power-sensitive industrial and embedded systems.
• High Density SRAM Architecture: Provides 1 Mbit of storage in a compact 28-pin SOJ package, optimizing board space without sacrificing capacity.

CY62127DV30LL-70ZIT Advantages vs Typical Alternatives

This device stands out against typical SRAM alternatives by offering a balanced combination of fast access speed and low power consumption at a 3.0V supply. Its low standby current and TTL-compatible I/O enhance both energy efficiency and integration flexibility. The compact SOJ packaging further supports high-density memory solutions in space-constrained industrial and embedded environments, providing a reliable and cost-effective memory solution.

Typical Applications

• Embedded system memory buffers requiring fast, stable, and reliable SRAM with low power consumption for industrial automation and control.
• Cache memory in communication equipment to enhance data throughput and processing efficiency.
• Temporary data storage in portable electronic devices where low voltage operation extends battery life.
• High-speed data acquisition systems benefiting from rapid access times and low noise operation.

CY62127DV30LL-70ZIT Brand Info

The CY62127DV30LL-70ZIT is produced by a leading semiconductor manufacturer known for developing advanced memory solutions tailored to industrial and embedded applications. This SRAM device exemplifies the company’s commitment to delivering robust, low-power, and high-speed memory components designed to meet the demanding requirements of modern electronics. The product benefits from rigorous quality control standards, ensuring reliable performance across a broad range of operating conditions.

FAQ

What is the typical access time and how does it impact system performance?

The typical access time for this SRAM device is 70 ns, which means it can retrieve stored data within 70 nanoseconds after an address is applied. This rapid access helps reduce latency in memory-intensive applications, improving overall system responsiveness and throughput in embedded and industrial systems.

What voltage levels does the device operate at, and why is this important?

The device operates at a nominal voltage of 3.0 V with a tolerance of ??0.3 V. This low-voltage operation is important because it aligns with modern low-power design standards, reducing power consumption and heat generation, which is critical for portable and battery-powered applications.

How does the standby current affect power consumption in embedded systems?

The standby current is typically around