CY62127DV30LL-70BVXI Overview
The CY62127DV30LL-70BVXI is a high-performance 1Mbit (128K x 8) CMOS Static RAM designed for low power consumption and fast access times. Operating at a 3.0V power supply, this SRAM device offers a 70ns access time, making it suitable for a variety of industrial and embedded applications requiring reliable and quick data storage. The compact 28-pin SOJ package facilitates easy PCB integration, while the low power dissipation supports energy-efficient system designs. This component is ideal for engineers and sourcing specialists seeking a robust memory solution from a reputable IC Manufacturer, balancing speed, power efficiency, and form factor.
CY62127DV30LL-70BVXI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Capacity | 1Mbit (128K x 8) |
| Access Time | 70 ns |
| Supply Voltage (VCC) | 3.0V ?? 0.3V |
| Operating Temperature Range | -40??C to +85??C |
| Package Type | 28-pin SOJ |
| Standby Current | 10 ??A (typical) |
| Operating Current | 30 mA (max) |
| Data Retention Voltage | 2.0V (min) |
| Input/Output Type | TTL Compatible |
| Technology | CMOS SRAM |
CY62127DV30LL-70BVXI Key Features
- Fast 70ns Access Time: Enables rapid read/write operations, improving system throughput and responsiveness in high-speed processing environments.
- Low Power CMOS Technology: Reduces power consumption significantly, making it ideal for battery-operated and energy-sensitive applications.
- 3.0V Operation Voltage: Supports low-voltage systems while maintaining stable performance, facilitating integration into modern digital designs.
- Wide Operating Temperature: Ensures reliable memory operation in harsh industrial environments ranging from -40??C to +85??C.
- TTL Compatible I/O: Simplifies interface with standard logic families, enhancing system design flexibility.
- Compact 28-pin SOJ Package: Minimizes PCB space usage without compromising pin accessibility or signal integrity.
- Data Retention at Reduced Voltage: Maintains memory content reliably down to 2.0V, supporting power-fail scenarios and system standby modes.
CY62127DV30LL-70BVXI Advantages vs Typical Alternatives
This SRAM device offers a compelling combination of fast access speed and low power consumption compared to typical alternatives. Its 3.0V operation and CMOS technology enable energy-efficient designs without sacrificing performance. The extended temperature tolerance and data retention at low voltage improve system reliability in industrial applications, making it a preferred choice for engineers who require robust, precise, and stable memory solutions in compact packages.
🔥 Best-Selling Products

Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package

Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring

Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package

Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Embedded systems requiring fast, reliable volatile memory for data buffering and temporary storage in industrial control environments.
- Communication equipment memory where low power and quick access times improve throughput and reduce thermal stress.
- Portable and battery-powered devices that benefit from the low standby current and wide voltage operation.
- Consumer electronics featuring memory subsystems designed for compact layouts and energy efficiency.
CY62127DV30LL-70BVXI Brand Info
Produced by a leading semiconductor manufacturer, the CY62127DV30LL-70BVXI is part of a well-established family of CMOS Static RAM products. This brand emphasizes quality, reliability, and industry-standard compliance, ensuring that the device meets stringent requirements for industrial and commercial applications. The SRAM solution combines advanced CMOS fabrication technology with rigorous testing to provide consistent performance and long-term stability, supporting designers in delivering high-quality electronic systems.


