CY62127DV30LL-70BVI Overview
The CY62127DV30LL-70BVI is a high-performance 128K x 8-bit CMOS static RAM designed for industrial and embedded applications requiring low power consumption and fast access times. Operating at a 3.0 V power supply with a 70 ns access time, this memory device combines reliability and efficiency, supporting both asynchronous and synchronous operations. Its compact 28-pin SOJ package facilitates easy integration into space-constrained designs. The device??s robust electrical characteristics and stable performance make it ideal for systems demanding consistent data retention and rapid memory access. For detailed specifications and sourcing, visit IC Manufacturer.
CY62127DV30LL-70BVI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 128K x 8 bits |
| Access Time | 70 ns |
| Power Supply Voltage (Vcc) | 3.0 V ?? 0.3 V |
| Operating Temperature Range | -40??C to +85??C |
| Input/Output Compatibility | TTL Compatible |
| Package Type | 28-pin SOJ |
| Standby Current | 5 ??A (typical) |
| Operating Current | 25 mA (typical) |
| Data Retention Voltage | 2.0 V (minimum) |
| Supply Noise Margin | ??10% |
CY62127DV30LL-70BVI Key Features
- High-speed 70 ns access time: Enables rapid data retrieval, improving overall system performance in time-critical applications.
- Low power consumption: With a typical standby current of 5 ??A, it significantly extends battery life in portable and embedded devices.
- Wide operating temperature range (-40??C to +85??C): Ensures reliable performance in harsh industrial environments.
- 3.0 V single power supply: Simplifies power management and reduces system complexity.
- TTL compatible inputs and outputs: Facilitates seamless integration with standard logic families.
- 28-pin SOJ package: Offers a compact footprint suitable for dense PCB layouts.
- Data retention voltage as low as 2.0 V: Allows data preservation during voltage drops or power interruptions.
CY62127DV30LL-70BVI Advantages vs Typical Alternatives
This SRAM device offers superior low-voltage operation at 3.0 V combined with fast 70 ns access times, outperforming many conventional 5 V SRAMs in power efficiency and speed. Its extended industrial temperature rating and minimal standby current provide enhanced reliability and energy savings. The device??s TTL compatibility and compact SOJ packaging facilitate easier system integration compared to bulkier or less flexible memory options.
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Typical Applications
- Embedded control systems requiring fast, reliable memory access and low power consumption, such as automotive controllers and industrial automation units.
- Battery-powered portable devices where minimizing standby current extends operational time.
- High-speed buffer memories in telecommunications equipment to support rapid data processing.
- Data acquisition systems that operate in harsh environments needing stable memory performance over wide temperature ranges.
CY62127DV30LL-70BVI Brand Info
The CY62127DV30LL-70BVI is manufactured by a leading semiconductor company known for delivering high-quality CMOS SRAM solutions. This product line emphasizes low power, fast access times, and industrial-grade reliability, making it a preferred choice for engineers designing robust embedded and industrial systems. The brand supports comprehensive technical documentation and offers consistent supply chain reliability for global B2B customers.
FAQ
What is the operating voltage range for this SRAM device?
The device operates at a nominal voltage of 3.0 V with a tolerance of ??0.3 V, allowing it to function reliably within a 2.7 V to 3.3 V power supply range. This low-voltage operation helps reduce power consumption and simplifies power management in embedded systems.
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What are the temperature specifications for the CY62127DV30LL-70BVI?
This SRAM




