CY62127DV30LL-55BVXI Overview
The CY62127DV30LL-55BVXI is a high-performance low-power static RAM (SRAM) device designed for industrial and embedded applications requiring fast access times and reliable data retention. With a memory capacity of 128K x 8 bits, this SRAM operates at a 3.0 V power supply, delivering a swift 55 ns access time that ensures efficient data throughput in demanding environments. Its low-voltage operation combined with low active current consumption makes it suitable for battery-powered and energy-conscious designs. The device??s 28-pin SOJ package offers a compact footprint while supporting robust interfacing capabilities, making it an ideal choice for engineers and sourcing specialists seeking reliable high-speed memory solutions. More detailed information is available through the IC Manufacturer.
CY62127DV30LL-55BVXI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 128K x 8 bits |
| Access Time | 55 ns |
| Supply Voltage (Vcc) | 3.0 V ??10% |
| Operating Temperature Range | -40??C to +85??C |
| Package Type | 28-pin SOJ |
| Input/Output Type | TTL Compatible |
| Standby Current | 10 ??A (typical) |
| Operating Current | 45 mA (max) |
CY62127DV30LL-55BVXI Key Features
- Low Power Consumption: Operates with a low active current of 45 mA and a standby current as low as 10 ??A, extending battery life in portable applications.
- Fast Access Time: Provides a 55 ns access time, enabling rapid data retrieval and high-speed processing in time-critical systems.
- Robust Operating Temperature: Supports industrial temperature range (-40??C to +85??C), ensuring reliable performance in harsh environments.
- TTL-Compatible I/O: Offers seamless integration with TTL logic levels, simplifying system design and compatibility.
- Compact SOJ Package: The 28-pin SOJ form factor reduces PCB footprint, facilitating dense board layouts and efficient space utilization.
- Stable Data Retention: Maintains data integrity with stable voltage supply requirements, suitable for embedded memory applications.
- Wide Voltage Tolerance: Designed for a 3.0 V power supply with ??10% tolerance, providing flexibility in power management.
CY62127DV30LL-55BVXI Advantages vs Typical Alternatives
This SRAM device offers a competitive edge through its combination of fast 55 ns access time and low power consumption, outperforming many typical alternatives that may consume higher current or offer slower speeds. Its industrial-grade temperature range and TTL-compatible interface enhance system reliability and design flexibility. The compact SOJ package further supports higher system integration without compromising performance, making it a superior choice for embedded memory solutions.
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Typical Applications
- High-speed buffer memory in industrial control systems where fast data access and low power are critical to maintaining operational efficiency and reducing heat generation.
- Embedded systems requiring reliable and quick volatile memory for temporary data storage during processing cycles.
- Telecommunication equipment demanding fast memory access for buffering and data handling.
- Battery-powered portable devices that benefit from the device??s low standby and active current characteristics.
CY62127DV30LL-55BVXI Brand Info
This SRAM component is manufactured by a leading IC provider known for delivering reliable and high-quality semiconductor memory solutions. The brand focuses on combining advanced CMOS technology with rigorous quality control to produce devices optimized for industrial and embedded applications. The CY62127DV30LL-55BVXI exemplifies their commitment to high-performance, low-power memory products designed to meet the stringent requirements of modern electronic designs.
FAQ
What is the memory capacity and organization of this SRAM?
The device features a memory organization of 128K x 8 bits, meaning it provides
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