CY62127DV30LL-55BVI Overview
The CY62127DV30LL-55BVI is a high-performance 1Mbit (128K x 8) CMOS Static RAM (SRAM) designed for fast, reliable data storage in industrial and embedded applications. Operating at a 3.0V power supply with an access time of 55 nanoseconds, it offers a balance of speed and low power consumption. The device features a low-voltage operation and a compact 28-pin TSOP II package, making it ideal for space-constrained designs. With advanced CMOS technology, this SRAM ensures stable operation across a wide temperature range, supporting robust system performance. For detailed technical support and sourcing, visit IC Manufacturer.
CY62127DV30LL-55BVI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Size | 1Mbit (128K x 8) |
| Access Time | 55 ns |
| Operating Voltage | 3.0 V ?? 0.3 V |
| Package Type | 28-pin TSOP II |
| Data I/O | 8-bit |
| Operating Temperature Range | -40??C to +85??C |
| Standby Current | 5 ??A (typical) |
| Operating Current | 25 mA (typical) |
| Data Retention Voltage | 2.0 V (min) |
CY62127DV30LL-55BVI Key Features
- Fast 55 ns access time: Enables quick read/write cycles, improving overall system speed and responsiveness in performance-critical applications.
- Low-voltage operation at 3.0 V: Reduces power consumption, which is essential for battery-powered and energy-efficient industrial systems.
- Compact 28-pin TSOP II package: Facilitates high-density board layouts and simplifies integration into space-limited designs.
- Wide operating temperature range (-40??C to +85??C): Ensures reliable functionality in harsh industrial environments and automotive applications.
CY62127DV30LL-55BVI Advantages vs Typical Alternatives
This SRAM device offers a superior combination of speed, low power consumption, and compact packaging compared to traditional memory solutions. Its 55 ns access time and 3.0 V operation provide enhanced system efficiency and reduced thermal stress. The extended temperature range and minimal standby current make it more reliable and power-efficient than many competing SRAMs in similar industrial segments.
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Typical Applications
- Embedded systems requiring fast, low-power volatile memory for buffering or caching data, such as industrial controllers and communication devices.
- Networking equipment where high-speed data storage and retrieval are critical.
- Automotive electronics that demand robust memory capable of operating in extended temperature environments.
- Consumer electronics that benefit from compact memory modules with rapid access times.
CY62127DV30LL-55BVI Brand Info
The CY62127DV30LL-55BVI is part of a reputable line of CMOS Static RAM products known for their reliability and performance in industrial and embedded applications. Manufactured using advanced CMOS technology, this memory device reflects the brand??s commitment to delivering high-quality, energy-efficient solutions suitable for demanding operational conditions. The product supports designers and engineers with consistent performance, long-term availability, and comprehensive technical documentation.
FAQ
What is the maximum data access speed of this SRAM?
The maximum access time for this SRAM is 55 nanoseconds, which allows for rapid data read and write operations, suitable for high-performance applications requiring fast memory access.
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What voltage levels are required to operate this memory device?
This SRAM operates at a nominal voltage of 3.0 volts, with an allowable variation of ??0.3 volts. It also supports data retention down to 2.0 volts to maintain stored data during low-power states.
Can this memory operate reliably in harsh temperature conditions?
Yes, the device is specified to function reliably over a wide industrial temperature range from -40??C up to +85??C, making it suitable for automotive and industrial environments.