CY62126DV30LL-70BVXI Overview
The CY62126DV30LL-70BVXI is a high-performance 128K x 8-bit static RAM (SRAM) device designed to deliver fast access times and low power operation for industrial and embedded system applications. Operating at a 3.0 V power supply with a 70 ns access time, it offers reliable data storage with robust data retention capabilities. Its compact 28-pin SOJ package supports efficient board integration while ensuring signal integrity. Ideal for use in buffer memory, cache memory, and other high-speed memory requirements, this SRAM balances speed, power efficiency, and durability for demanding electronic environments. For detailed technical support and procurement, visit IC Manufacturer.
CY62126DV30LL-70BVXI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Organization | 128K x 8 bits |
| Access Time | 70 ns |
| Operating Voltage | 3.0 V ?? 0.3 V |
| Operating Temperature Range | -40??C to +85??C |
| Data Retention Voltage | 2.0 V (minimum) |
| Package Type | 28-pin SOJ (Small Outline J-Lead) |
| Standby Current | 10 ??A (typical) |
| Operating Current | 30 mA (typical) |
| Input/Output Compatibility | TTL compatible |
CY62126DV30LL-70BVXI Key Features
- Fast 70 ns Access Time: Enables rapid data retrieval, critical for performance-sensitive applications such as cache memory and system buffers.
- Low Voltage Operation: Operates efficiently at 3.0 V, reducing power consumption and enabling compatibility with low-voltage systems.
- Wide Operating Temperature Range: Supports industrial-grade temperatures from -40??C to +85??C, ensuring reliability in harsh environments.
- Data Retention Capability: Maintains stored data at voltages as low as 2.0 V during standby, enhancing data integrity in low-power modes.
- Compact 28-pin SOJ Package: Facilitates easy PCB layout and supports high-density memory integration.
- Low Standby and Operating Currents: Minimizes power consumption, extending battery life in portable and embedded systems.
- TTL-Compatible I/O: Ensures seamless interfacing with standard logic devices, simplifying system design.
CY62126DV30LL-70BVXI Advantages vs Typical Alternatives
This SRAM device offers a superior balance of speed, low power consumption, and industrial-grade temperature tolerance compared to typical asynchronous SRAMs. Its 70 ns access time enhances system performance, while the low voltage operation and standby current reduce overall energy usage. The wide temperature range and robust data retention capabilities make it a reliable choice for critical industrial and embedded applications where stability and efficiency are paramount.
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Typical Applications
- Cache memory in embedded processors, providing fast temporary data storage to accelerate system throughput and responsiveness in industrial control systems.
- Buffer memory for data acquisition devices, ensuring smooth and reliable data flow during high-speed signal processing.
- High-speed working memory in telecommunications equipment, supporting rapid data access and system stability under demanding conditions.
- Memory expansion in portable medical devices, combining low power operation with robust performance to extend device runtime in critical healthcare environments.
CY62126DV30LL-70BVXI Brand Info
The CY62126DV30LL-70BVXI is a product from a leading semiconductor manufacturer specializing in high-reliability memory components tailored for industrial and embedded markets. This SRAM module reflects the brand??s commitment to delivering advanced memory solutions with superior speed, low power consumption, and rugged performance. Designed with stringent quality standards and supported by comprehensive technical documentation, this device enables engineers and sourcing specialists to implement dependable memory solutions across diverse applications.