CY62126DV30LL-55ZXIT 512K x 8 SRAM Memory IC – 30ns Access Time, SOIC-28 Package

  • This device provides high-speed synchronous static RAM functionality, enabling efficient data storage and retrieval in digital systems.
  • Featuring a wide operating voltage range, it ensures consistent performance across various power conditions for system stability.
  • The compact LFCSP package minimizes board space, allowing for denser circuit designs and improved thermal management.
  • Ideal for buffering in graphics controllers, it supports smooth rendering by reducing latency and improving data throughput.
  • Manufactured under strict quality controls, the component delivers reliable operation suitable for long-term deployment in embedded systems.
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CY62126DV30LL-55ZXIT Overview

The CY62126DV30LL-55ZXIT is a high-performance 128K x 8-bit static RAM (SRAM) device designed for low-voltage, high-speed memory applications. Operating at 3.0V with a 55ns access time, it offers fast and reliable data storage ideal for embedded systems, communication equipment, and industrial control. The low power consumption and CMOS technology enhance efficiency without compromising speed. This SRAM supports easy integration into complex digital systems, making it a preferred choice for engineers requiring compact, stable, and fast memory solutions. For further technical details, visit IC Manufacturer.

CY62126DV30LL-55ZXIT Technical Specifications

ParameterSpecification
Memory Density128K x 8 bits
Access Time55 ns
Supply Voltage (Vcc)3.0 V ??0.3 V
Operating Temperature Range-40??C to +85??C
Standby Current10 ??A (typical)
Operating Current30 mA (typical)
Package Type44-pin TSOP II
Data Retention Voltage2.0 V (minimum)
Input/Output CompatibilityTTL Compatible
InterfaceAsynchronous SRAM

CY62126DV30LL-55ZXIT Key Features

  • High-Speed Access: 55 ns access time ensures rapid data retrieval, improving overall system performance in timing-critical applications.
  • Low-Voltage Operation: Optimized for a 3.0 V power supply, reducing power consumption and heat generation in battery-powered or energy-sensitive devices.
  • Wide Temperature Range: Operating from -40??C to +85??C, it guarantees reliable operation in harsh industrial environments.
  • Low Standby Current: Minimal current draw in standby mode extends battery life and reduces energy costs in idle states.
  • Compact 44-pin TSOP II Package: Enables high-density memory integration while maintaining a small PCB footprint.
  • CMOS Technology: Provides excellent noise immunity and low power consumption enhancing device reliability.
  • Asynchronous SRAM Interface: Simplifies timing requirements, allowing seamless integration with various processors and microcontrollers.

CY62126DV30LL-55ZXIT Advantages vs Typical Alternatives

This SRAM device stands out with its low-voltage 3.0 V operation and fast 55 ns access time, offering a balance between speed and power efficiency. Compared to alternatives, it provides superior performance in energy-sensitive industrial and embedded applications. The wide temperature range and low standby current further enhance reliability and integration flexibility, making it a robust memory solution where stability and compactness are critical.

Typical Applications

  • Embedded systems requiring fast, low-power SRAM for buffering and temporary data storage in automotive or industrial automation environments.
  • Networking and communication equipment needing quick access memory for packet buffering and protocol processing.
  • High-speed data acquisition modules where rapid read/write cycles improve system throughput.
  • Consumer electronics and portable devices benefiting from low-voltage, low-power memory solutions for extended battery life.

CY62126DV30LL-55ZXIT Brand Info

The CY62126DV30LL-55ZXIT is part of a reliable SRAM lineup known for high-speed, low-power memory solutions tailored to industrial and embedded applications. Manufactured with advanced CMOS technology, this product reflects the brand??s commitment to quality, durability, and performance. Its compact TSOP II packaging and wide operating conditions ensure compatibility with a broad range of designs, supporting engineers in optimizing system efficiency and reliability.

FAQ

What is the access time of this SRAM device?

The device offers a fast access time of 55 nanoseconds, making it suitable for applications requiring quick data retrieval and high-speed memory operations.

What voltage levels does this memory support?

This SRAM operates primarily at 3.0 V with a tolerance of ??0.3 V. It also

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