CY62126DV30LL-55ZXI Overview
The CY62126DV30LL-55ZXI is a high-performance 128K x 8-bit Low Voltage CMOS Static RAM designed for industrial and commercial applications requiring fast access times and low power consumption. Featuring a 3.0V power supply and a compact 32-pin TSOP II package, this memory device supports access times as fast as 55ns, making it suitable for systems demanding reliable, high-speed data storage. Engineered with power efficiency in mind, it offers low operating and standby currents, enhancing system longevity and reducing thermal output. This SRAM is an ideal choice for buffer memory, cache memory, and embedded systems. For more detailed product information, visit IC Manufacturer.
CY62126DV30LL-55ZXI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 128K x 8 bits (1,048,576 bits) |
| Access Time | 55 ns |
| Operating Voltage | 3.0V ?? 0.3V |
| Package Type | 32-pin TSOP II |
| Operating Temperature Range | -40??C to +85??C |
| Standby Current | 10 ??A (typical) |
| Operating Current | 40 mA (typical) |
| Data Retention Voltage | 1.5V (minimum) |
| Data Input/Output | 8-bit |
| Refresh Type | Static RAM (no refresh required) |
CY62126DV30LL-55ZXI Key Features
- Low Voltage Operation: Supports a 3.0V supply voltage, reducing power consumption and enabling compatibility with modern low-voltage systems.
- Fast Access Time: 55 ns access speed ensures rapid read/write cycles, improving overall system performance in time-critical applications.
- Compact TSOP II Package: The 32-pin Thin Small Outline Package (TSOP II) allows for high-density PCB layouts and simplifies system integration.
- Wide Operating Temperature Range: -40??C to +85??C ensures stable operation in harsh industrial environments.
- Low Standby Current: Enhances energy efficiency in battery-powered or low-power systems by minimizing power consumption during idle states.
- Static RAM Architecture: Eliminates the need for refresh cycles, simplifying memory management and reducing latency.
CY62126DV30LL-55ZXI Advantages vs Typical Alternatives
This device offers a significant advantage over typical SRAM alternatives by combining a low voltage 3.0V design with fast 55 ns access times, enabling efficient power usage without sacrificing speed. Its static RAM architecture removes the complexity of refresh requirements, increasing reliability and simplifying system design. Additionally, its compact TSOP II package supports high-density applications, making it an excellent choice for engineers seeking both performance and integration efficiency.
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Typical Applications
- High-speed buffer memory in communication and networking equipment where fast access and low power consumption are critical to maintaining data throughput and system stability.
- Cache memory for embedded processors requiring rapid data retrieval to enhance processing efficiency.
- Data storage in portable and battery-powered industrial devices benefiting from low standby currents to extend operational life.
- Memory modules in automotive and industrial control systems operating reliably across wide temperature ranges.
CY62126DV30LL-55ZXI Brand Info
The CY62126DV30LL-55ZXI is a product from a leading semiconductor manufacturer specializing in high-quality CMOS SRAM solutions tailored for industrial and commercial applications. This series is known for its reliability, power efficiency, and fast data access speeds, meeting stringent industry standards for memory components. Built with advanced CMOS technology, it reflects the brand??s commitment to delivering robust memory devices that optimize system performance while minimizing power consumption and footprint.
FAQ
What is the operating voltage range for this SRAM?
The device operates at a nominal voltage of 3.0V with a tolerance of ??0.3V, meaning it is designed to function reliably between 2.7V and 3.3V. This low voltage operation helps reduce power consumption and supports
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