CY62126DV30L-55ZI Overview
The CY62126DV30L-55ZI is a high-performance, low-voltage static RAM (SRAM) device designed for industrial and embedded applications requiring fast access and low power consumption. Featuring a 32K x 8-bit memory organization, it offers reliable data storage with ultrafast access times of 55 ns. The device supports a single 3.0 V power supply, optimizing power efficiency while maintaining stable operation across industrial temperature ranges. Its compact 28-pin SOJ package ensures easy integration in space-constrained designs. Engineers and sourcing specialists will benefit from its robust performance combined with simplicity in system architecture. For more information, visit IC Manufacturer.
CY62126DV30L-55ZI Technical Specifications
| Parameter | Specification |
|---|---|
| Memory Density | 32K x 8 bits (262,144 bits) |
| Access Time | 55 ns |
| Operating Voltage | 3.0 V ?? 10% |
| Data Retention Voltage | 2.0 V (minimum) |
| Package Type | 28-pin SOJ |
| Operating Temperature Range | -40??C to +85??C |
| Standby Current | 25 ??A (typical) |
| Operating Current | 25 mA (max) |
| Data I/O | 8-bit bidirectional |
CY62126DV30L-55ZI Key Features
- Fast 55 ns access time: Enables rapid read/write cycles, improving system throughput and responsiveness in time-critical applications.
- Low-voltage operation at 3.0 V: Reduces power consumption without compromising performance, ideal for power-sensitive embedded systems.
- Wide industrial temperature range: Ensures reliable memory performance in harsh environments from -40??C to +85??C.
- Low standby current: Minimizes power draw during idle periods, extending battery life in portable or remote devices.
- Simple 3-state output control: Facilitates easy bus sharing and system integration with other components.
- 28-pin SOJ packaging: Compact footprint supports high-density PCB layouts and simplifies manufacturing processes.
CY62126DV30L-55ZI Advantages vs Typical Alternatives
This SRAM device offers superior speed and low-voltage operation compared to typical memory solutions, providing faster access times at only 3.0 V supply. Its industrial temperature tolerance and low standby current make it more reliable and energy-efficient in demanding environments. These advantages translate to optimized system performance, reduced power consumption, and extended device longevity, making it a preferred choice over conventional SRAMs with higher voltage requirements and slower speeds.
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Typical Applications
- Embedded control systems requiring quick memory access and low power consumption, such as industrial automation controllers, where fast and reliable data storage is crucial for real-time processing.
- Communication equipment, including routers and switches, which benefit from fast SRAM to buffer data packets efficiently.
- Portable instrumentation and measurement devices that demand low standby power to extend operational battery life during idle periods.
- Consumer electronics and handheld devices needing compact memory solutions with robust performance across temperature variations.
CY62126DV30L-55ZI Brand Info
This product is part of a well-established portfolio of static RAM devices engineered for high speed and low power consumption. Designed to meet the rigorous demands of industrial and commercial applications, it embodies quality and reliability. The manufacturer emphasizes strict quality control and comprehensive testing to ensure consistent performance across all units. The device supports a broad ecosystem of development tools and documentation, facilitating seamless incorporation into diverse system architectures.
FAQ
What is the operating voltage range for this SRAM?
The device operates at a nominal voltage of 3.0 V with a tolerance of ??10%. It maintains data retention at voltages as low as 2.0 V, allowing for low-power operation and flexibility in system
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