CY27C256A-45ZC 256Kb UV EPROM Memory IC ?C 28-Pin DIP Package

  • Non-volatile memory stores data reliably, enabling persistent information retention after power loss.
  • This device supports fast access times, which improves system performance in time-critical operations.
  • The compact ceramic DIP package offers board-space savings and ease of integration into existing designs.
  • Suitable for embedded systems requiring stable, quick-read memory to enhance operational efficiency.
  • Manufactured under controlled processes to ensure durability and consistent data integrity over time.
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CY27C256A-45ZC Overview

The CY27C256A-45ZC is a high-performance 256K-bit (32K x 8) CMOS UV erasable programmable read-only memory (EPROM) device designed for reliable non-volatile data storage. Featuring a fast access time of 45 nanoseconds, this memory solution is optimized for use in embedded systems, industrial controls, and computing applications where quick read speeds and data retention are critical. It supports standard 5V power supply operation and offers stable data integrity with CMOS low power consumption. The device is available in a 28-pin dual inline package (DIP), making it compatible with a wide range of legacy and modern systems. For detailed product support and procurement, visit IC Manufacturer.

CY27C256A-45ZC Technical Specifications

ParameterSpecification
Memory Size256K bits (32K x 8)
Access Time45 ns
Operating Voltage5 V ??10%
Power Dissipation (Active)Maximum 45 mW
Standby Power DissipationMaximum 200 ??A
Package Type28-pin DIP
Data RetentionMinimum 10 years
Endurance1000 Erase/Write Cycles
Programming Voltage12.75 V ??0.25 V

CY27C256A-45ZC Key Features

  • High-Speed Access: With a 45 ns access time, it enables rapid data retrieval for time-critical applications.
  • Low Power Consumption: CMOS technology ensures minimal power usage in both active and standby modes, enhancing energy efficiency.
  • Non-Volatile Memory: Retains stored data for a minimum of 10 years without power, crucial for long-term reliability.
  • UV Erasable EPROM: Supports ultraviolet light erasure for memory reprogramming, providing flexible in-system updates.
  • Standard 5V Operation: Compatible with common system voltages, simplifying integration into existing platforms.
  • Robust Endurance: Capable of 1000 erase/write cycles, allowing for multiple reprogramming events during development and deployment.
  • Industry-Standard Packaging: 28-pin DIP form factor ensures straightforward replacement and prototyping in legacy and new designs.

CY27C256A-45ZC Advantages vs Typical Alternatives

This EPROM device offers a competitive edge with its fast 45 ns access time and low power CMOS design, outperforming many standard PROMs in speed and energy efficiency. Its extended data retention and high endurance cycles provide superior reliability for industrial and embedded applications. The UV erasable capability offers flexible reprogramming compared to one-time programmable alternatives, while the consistent 5V operation enables seamless integration with a broad range of systems.

Typical Applications

  • Embedded system firmware storage where fast read speeds and data retention are essential, such as in microcontroller-based designs.
  • Industrial control systems requiring reliable, non-volatile memory for configuration and program code storage.
  • Computer BIOS memory to store startup firmware with the ability to update through UV erasure.
  • Consumer electronics that demand low power consumption and dependable long-term data storage.

CY27C256A-45ZC Brand Info

The CY27C256A-45ZC is part of a well-established family of CMOS EPROMs known for their reliability and performance in industrial and commercial electronics. Manufactured to meet rigorous quality standards, this memory component is widely adopted in applications requiring fast, stable, and reprogrammable non-volatile storage. It reflects the commitment of its producer to provide durable semiconductor solutions that facilitate efficient system design and long-term operational stability.

FAQ

What is the maximum number of erase and write cycles supported by this EPROM?

The device supports up to 1000 erase/write cycles, allowing multiple reprogramming events. This endurance level is suitable for development phases and applications where occasional firmware updates are necessary.

How long can data be retained in the memory

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