CY25023SXC-1 Voltage Regulator IC – SMD Package, High Efficiency Power Control

CY25023SXC-1 Overview

The CY25023SXC-1 is a high-performance 2K x 8-bit static RAM device designed for fast, reliable data storage in industrial and embedded applications. It offers a low-power CMOS technology solution with a standard asynchronous interface that supports easy system integration. Its 200 ns access time supports efficient read/write cycles, making it ideal for memory-intensive tasks. The device is packaged in a compact 24-pin SOJ form factor, ensuring compatibility with space-constrained designs. For detailed specifications and purchasing information, visit IC Manufacturer.

CY25023SXC-1 Technical Specifications

CY25023SXC-1 Key Features

• Fast 200 ns access time: Enables rapid data retrieval and storage, improving system throughput in timing-critical applications.
• Low power CMOS technology: Reduces overall power consumption, benefiting battery-operated and energy-sensitive devices.
• Asynchronous operation: Simplifies interface design by eliminating the need for external clocks, enhancing ease of integration.
• TTL-compatible inputs and outputs: Ensures seamless compatibility with standard logic families used in industrial control systems.

CY25023SXC-1 Advantages vs Typical Alternatives

This SRAM device offers superior speed and low power consumption compared to traditional bipolar SRAMs, resulting in enhanced system efficiency. Its asynchronous interface and TTL compatibility make it straightforward to integrate, reducing design complexity. The compact SOJ package provides space-saving advantages without compromising performance, making it a reliable choice for embedded memory needs.

Typical Applications

• Embedded systems requiring fast, reliable volatile memory for temporary data storage, such as microcontroller-based control units and digital signal processing.
• Buffer memory in communication devices to manage high-speed data transfer and reduce latency.
• Industrial automation systems needing stable and quick-access memory modules for real-time processing tasks.
• Memory expansion in legacy systems or custom hardware designs where standard asynchronous SRAM is required for compatibility.

CY25023SXC-1 Brand Info

This product is manufactured by a leading semiconductor company known for delivering high-quality memory solutions tailored to industrial and embedded applications. The device reflects the brand??s commitment to robust design and reliable performance, supported by stringent testing and quality control processes. It is widely recognized for its durability and consistency in demanding electronic environments.

FAQ

What is the maximum operating voltage for this SRAM?

The recommended operating voltage for the device is 5 V with a tolerance of ??10%, meaning it reliably functions within a range of approximately 4.5 V to 5.5 V. Operating outside this range may compromise performance or damage the device.

Can this SRAM be used in battery-powered applications?

Yes, due to its low power CMOS design, the device consumes minimal current during standby (up to 100 ??A), making it suitable for battery-operated systems where power efficiency is critical.

What is the typical access time and how does it affect system performance?

The SRAM features a 200 ns access time, which determines the speed at which data can be read or written. This fast response time enhances overall system throughput, especially in applications demanding quick memory access.

Is the device compatible with standard TTL logic levels?

Yes, the inputs and outputs are TTL-compatible, allowing it to interface directly with standard TTL logic circuits without additional level shifting, facilitating seamless integration into existing systems.

What package type is this SRAM available in and why is it beneficial?

The device comes in a 24-pin SOJ (Small Outline J-Lead) package, which offers a compact footprint suitable for space-constrained PCB layouts