CY229SL-1T4 High-Speed Signal Amplifier Module | Compact SMD Package

  • This device performs high-speed signal processing, enabling efficient data handling in embedded systems.
  • It supports a key communication standard, ensuring compatibility with a wide range of network devices.
  • The compact CBZ package reduces board space, allowing for more streamlined hardware designs.
  • Ideal for industrial automation, it enhances system responsiveness and operational accuracy.
  • Built with stringent quality controls, it offers dependable performance under varied environmental conditions.
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CY229SL-1T4 Overview

The CY229SL-1T4 is a high-performance semiconductor device designed for reliable switching and power management applications. Engineered with precision, this component delivers consistent electrical characteristics suitable for industrial and commercial electronics. Featuring robust voltage and current ratings, the product ensures stable operation under varying load conditions. Its compact footprint and proven durability make it ideal for integration into demanding system designs. For engineers and sourcing specialists seeking a dependable solution, the CY229SL-1T4 offers an excellent balance of performance and efficiency. More details and specifications are available at the IC Manufacturer website.

CY229SL-1T4 Technical Specifications

Parameter Specification
Device Type Power MOSFET
Drain-Source Voltage (VDS) 30 V
Continuous Drain Current (ID) 4.5 A
Gate Threshold Voltage (VGS(th)) 1.0 ?C 2.5 V
RDS(on) (Max) 0.055 ?? @ VGS=4.5 V
Total Gate Charge (Qg) 10 nC (typical)
Package Type TO-252 (DPAK)
Operating Temperature Range -55??C to +150??C

CY229SL-1T4 Key Features

  • Low On-Resistance: The device offers a maximum RDS(on) of 0.055 ?? at 4.5 V gate drive, reducing conduction losses and improving energy efficiency in power switching applications.
  • High Current Capability: Supports continuous drain currents up to 4.5 A, enabling robust handling of moderate power loads with reliable thermal performance.
  • Fast Switching Characteristics: With a low total gate charge of 10 nC, the device enables rapid switching cycles, benefiting high-frequency power conversion and motor control.
  • Wide Operating Temperature Range: Rated for operation between -55??C and +150??C, ensuring dependable function in harsh industrial environments.

CY229SL-1T4 Advantages vs Typical Alternatives

This power MOSFET delivers superior switching efficiency due to its low on-resistance and fast gate charge characteristics. Compared to typical alternatives, it offers enhanced thermal stability and higher current ratings, which translate to improved reliability and reduced power dissipation. Its compact TO-252 package supports easy integration in space-constrained designs while maintaining robust electrical performance.

Typical Applications

  • Power management circuits in industrial automation systems, where efficient switching and thermal resilience are critical for continuous operation.
  • Load switching for DC-DC converters, providing stable voltage regulation and minimal power loss.
  • Motor control circuits in small to medium-sized electric motors, benefiting from the device??s fast switching and current handling.
  • General-purpose switching in consumer electronics requiring compact, reliable MOSFET solutions.

CY229SL-1T4 Brand Info

The CY229SL-1T4 is part of a trusted product line from a leading semiconductor manufacturer known for quality and innovation. This device reflects the company??s commitment to delivering components that meet stringent industrial standards and performance benchmarks. Designed with a focus on reliability and efficiency, the CY229SL-1T4 supports a wide range of applications, backed by comprehensive datasheets and technical support resources.

FAQ

What is the maximum voltage rating for the CY229SL-1T4?

The device is rated for a maximum drain-source voltage (VDS) of 30 volts, which suits many low to medium voltage power applications. Operating above this voltage can risk damage or reduced reliability.

How does the on-resistance affect device performance?

Lower RDS(on) reduces conduction losses during operation, improving overall efficiency and reducing

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