BSZ160N10NS3GATMA1 Overview
The BSZ160N10NS3GATMA1 is an advanced N-channel MOSFET designed for high-efficiency power switching applications. Featuring robust voltage and current ratings, this device offers excellent performance in both low- and high-side switching roles, making it ideal for demanding industrial and automotive environments. Its compact SuperSO8 package allows for space-saving PCB layouts without sacrificing thermal or electrical characteristics. With reliable switching behavior and optimized RDS(on), it supports designers seeking high performance and long-term reliability. For more details, visit IC Manufacturer.
BSZ160N10NS3GATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 16 A |
| RDS(on) (max) | 16 m?? @ 10V |
| Gate Charge (Qg) | 24 nC |
| Package | SuperSO8 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55??C to 150??C |
| Polarity | N-Channel |
BSZ160N10NS3GATMA1 Key Features
- Low RDS(on) enables efficient power management, reducing conduction losses in high-current applications.
- High drain-source voltage rating of 100 V supports robust operation in demanding industrial and automotive systems.
- Compact SuperSO8 package streamlines PCB layout and improves thermal handling, facilitating reliable surface-mount assembly.
- Optimized gate charge (24 nC) ensures fast switching, minimizing switching losses and enhancing overall circuit efficiency.
BSZ160N10NS3GATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out due to its combination of low RDS(on), high voltage capability, and compact SuperSO8 package. Compared to typical alternatives, it offers superior efficiency, faster switching response, and better thermal characteristics, making it a preferred choice for power designers focused on minimizing losses and maximizing reliability in industrial and automotive powertrain circuits.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Industrial power supply switching: Ideal for use in high-efficiency DC-DC converters and motor controllers, where low conduction losses and high reliability are required for continuous operation.
- Automotive electronic control units: Suitable for integration into automotive ECUs, supporting both load switching and protection functions in harsh operating environments.
- Battery management systems: Used in battery protection and charging circuits to provide efficient current handling and fast switching for extended battery life.
- General-purpose switching: Applicable in a wide range of switching and amplification circuits across industrial automation and consumer electronics where robust MOSFET performance is needed.
BSZ160N10NS3GATMA1 Brand Info
The BSZ160N10NS3GATMA1 is produced by a leading manufacturer renowned for delivering innovative and reliable discrete power semiconductors. This particular product is engineered to meet the rigorous demands of modern power electronics, offering a combination of high voltage capability, efficient switching, and compact packaging. Its proven performance in both industrial and automotive sectors reflects the brand??s commitment to quality, efficiency, and long-term support for engineers and OEMs.
FAQ
What is the maximum voltage that the BSZ160N10NS3GATMA1 can safely handle?
This device is rated for a maximum drain-source voltage of 100 V, allowing it to operate reliably in many industrial and automotive power switching applications where higher voltage tolerance is essential.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What makes the SuperSO8 package advantageous for this MOSFET?
The SuperSO8 package offers a compact form factor that saves PCB space while maintaining excellent thermal performance. It is ideal for surface-mount assembly, which streamlines manufacturing and increases reliability in dense electronic designs.
How does the low RDS(on) value benefit power supply and motor control circuits?
A low RDS(on) (16 m?? at 10V) minimizes conduction losses, directly improving energy efficiency and reducing heat generation. This is especially valuable in applications requiring high current and continuous operation.
📩 Contact Us
Can this MOSFET be used in automotive environments?
Yes, with its robust voltage, current ratings, and wide operating temperature range (-55??C to 150??C), this device is well-suited for automotive environments, including ECUs and battery management systems.
Is the BSZ160N10NS3GATMA1 suitable for high-frequency switching?
With an optimized gate charge of 24 nC, this MOSFET supports fast switching speeds, making it suitable for high-frequency applications such as DC-DC converters and other power electronic circuits where dynamic response is critical.
