BSZ100N06LS3GATMA1 N-Channel MOSFET, 60V 100A, PG-TSDSON-8 Package

  • Designed for efficient switching and power control, making it suitable for a variety of electronic circuits.
  • Features an N-channel MOSFET structure, providing low on-resistance for improved energy efficiency.
  • Compact package type allows for board-space savings in dense PCB layouts and portable devices.
  • Widely used in motor drives and DC-DC converters, helping optimize power delivery in these applications.
  • Manufactured to meet industry-standard reliability requirements for consistent, dependable operation over time.
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BSZ100N06LS3GATMA1 Overview

The BSZ100N06LS3GATMA1 is a power MOSFET designed for efficient switching and amplification in a wide range of industrial, automotive, and consumer applications. Featuring low on-resistance and robust voltage handling, it offers enhanced performance in power management and load switching circuits. Its compact SuperSO8 package enables space-saving designs, while its reliability and efficiency make it ideal for demanding environments. For sourcing and additional support, visit IC Manufacturer.

BSZ100N06LS3GATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)60 V
Continuous Drain Current (ID)100 A
Maximum Power Dissipationÿ
On-Resistance (RDS(on))6.7 m?? @ 10Vgs
Gate Threshold Voltage (VGS(th))1V ÿ 3V
Package / CaseSuperSO8
PolarityN-Channel
Operating Temperature Rangeÿ

BSZ100N06LS3GATMA1 Key Features

  • High continuous drain current capability enables efficient power delivery in applications requiring robust load switching.
  • Low RDS(on) of 6.7 m?? minimizes conduction losses, improving overall system efficiency and reducing energy costs.
  • 60V drain-source voltage rating supports operation in higher voltage systems, expanding design flexibility for industrial and automotive power rails.
  • SuperSO8 package offers a compact footprint with excellent thermal characteristics, supporting higher current handling with improved board space utilization.

BSZ100N06LS3GATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, the BSZ100N06LS3GATMA1 delivers lower on-resistance and higher current capability, which translates to reduced conduction losses and improved efficiency. Its advanced packaging and voltage rating ensure reliable performance in demanding power management scenarios, offering clear benefits in both energy savings and circuit robustness.

Typical Applications

  • DC-DC converters for industrial and automotive systems: The high current rating and low on-resistance make this device suitable for efficient power conversion, reducing thermal management requirements in compact spaces.
  • Load switching in electronic control units: Ideal for fast and reliable switching, supporting systems that require frequent on/off control without degradation.
  • Motor drive circuits: Provides robust handling of inductive loads, ensuring dependable operation for brushless DC motors and similar applications.
  • Battery management systems: Supports safe and efficient switching in battery-powered devices, enhancing overall energy utilization and protection features.

BSZ100N06LS3GATMA1 Brand Info

The BSZ100N06LS3GATMA1 is part of a specialized family of N-channel MOSFETs optimized for high current, low loss, and space-efficient designs. Its SuperSO8 packaging and electrical characteristics reflect a commitment to delivering reliable, efficient solutions for industrial and automotive power electronics. This product is engineered to meet the needs of engineers seeking dependable MOSFET performance in both new designs and drop-in replacement scenarios.

FAQ

What is the main benefit of using the BSZ100N06LS3GATMA1 in power management circuits?

The primary advantage is its combination of low on-resistance and high current capability, which reduces energy losses and improves the overall efficiency of power management systems. This results in less heat generation and potentially lower cooling requirements.

Is the BSZ100N06LS3GATMA1 suitable for automotive applications?

Yes, the device??s 60V drain-source voltage rating and high continuous drain current make it well-suited for automotive systems, including load switching and power conversion in control units, electric drive modules, and battery management systems.

How does the SuperSO8 package benefit the end application?

The SuperSO8 package provides a compact form factor with improved thermal performance. This allows higher current handling in a smaller space, supporting dense PCB layouts and reducing the need for additional thermal management solutions.

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Can this device be used in inductive load switching, like motor drives?

Yes, its robust current rating and voltage capability allow it to handle the demands of inductive loads such as those found in motor drives, ensuring reliable operation and long-term durability in these applications.

What is the typical gate threshold voltage range for this MOSFET?

The gate threshold voltage is specified between 1V and 3V, allowing flexible drive options and compatibility with a variety of logic-level control circuits. This supports ease of integration into different system designs.

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