BSZ099N06LS5ATMA1 N-Channel MOSFET Power Transistor, 60V, 8A, SuperSO8 Package

  • Serves as a power MOSFET, enabling efficient switching and regulation in electronic circuits.
  • Low on-resistance minimizes conduction losses, which helps improve energy efficiency in power supplies.
  • The compact package type allows for dense PCB layouts and reduces overall board space requirements.
  • Ideal for use in motor control applications, where fast and reliable switching is needed for performance.
  • Manufactured for consistent operation, supporting stable performance under typical environmental stresses.
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BSZ099N06LS5ATMA1 Overview

The BSZ099N06LS5ATMA1 is a high-performance N-channel MOSFET designed for power management and switching applications in industrial and automotive environments. Featuring advanced low on-resistance and a robust trench technology, this device offers efficient operation in compact designs. Its small SuperSO8 package and strong electrical characteristics make it ideal for space-constrained, high-efficiency circuits. Sourced directly from qualified supply chains, the BSZ099N06LS5ATMA1 delivers reliable switching performance with minimized conduction losses. For more details, visit IC Manufacturer.

BSZ099N06LS5ATMA1 Technical Specifications

Parameter Value
Device Type N-Channel MOSFET
Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) 100 A
RDS(on) (max) @ VGS = 10V 9.9 m??
Gate-Source Voltage (VGS) ?I20 V
Package Type SuperSO8
Operating Temperature Range -55??C to 150??C
Mounting Type Surface Mount
Polarity N-Channel

BSZ099N06LS5ATMA1 Key Features

  • Low on-resistance of 9.9 m?? at 10V gate drive significantly reduces conduction losses, enabling higher system efficiency.
  • High continuous drain current capability (100 A) supports demanding power applications, offering ample design headroom for engineers.
  • Robust 60 V drain-source voltage rating ensures safe operation in industrial and automotive voltage domains.
  • Compact SuperSO8 surface-mount package facilitates space savings and simplifies PCB layout for high-density designs.
  • Wide gate-source voltage range (?I20 V) enhances device ruggedness and flexibility in various drive configurations.
  • Optimized for fast switching, supporting high-frequency power conversion and minimizing switching losses.

BSZ099N06LS5ATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFET solutions, this device offers notably lower on-resistance, resulting in reduced heat generation and improved energy efficiency. The high current handling and compact SuperSO8 package support more powerful and dense system designs. Its broad gate-source voltage tolerance and robust voltage rating further enhance reliability in demanding environments, making it a trusted choice for designers prioritizing efficiency and space savings.

Typical Applications

  • DC-DC Power Converters: Used for efficient power switching and regulation in buck, boost, and synchronous rectifier topologies, the device ensures low conduction losses and high reliability.
  • Motor Drive Circuits: Ideal for automotive and industrial motor control applications due to its high current capability and rugged voltage performance.
  • Battery Management Systems: Supports protection and switching functions in battery-powered equipment, improving system safety and performance.
  • Load Switches and Power Distribution: Suitable for switching and distribution roles in industrial power systems, enabling compact layouts and robust operation under varying loads.

BSZ099N06LS5ATMA1 Brand Info

The BSZ099N06LS5ATMA1 is a specialized N-channel MOSFET engineered to meet the rigorous demands of industrial and automotive sectors. It is manufactured with advanced trench technology, delivering a blend of low on-resistance, high current capability, and compact packaging. This product exemplifies a commitment to reliability, efficiency, and innovation in power management solutions, supporting engineers in developing high-performance, space-efficient electronic systems.

FAQ

What are the main advantages of using this MOSFET in high-current applications?

The combination of low on-resistance and high continuous drain current allows for efficient power delivery with minimized heat dissipation. This enables designers to achieve reliable, compact, and energy-efficient systems, especially where thermal management is critical.

Is the SuperSO8 package suitable for automated assembly lines?

Yes, the SuperSO8 is a widely supported surface-mount package compatible with standard pick-and-place and reflow soldering processes, making it ideal for high-volume, automated PCB assembly environments.

Can this device be used in automotive environments?

With a 60 V drain-source voltage and wide operating temperature range, the MOSFET is well-suited for automotive electronics, including motor drives and power management, offering the required durability and reliability.

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How does the wide gate-source voltage range benefit circuit designers?

The ?I20 V gate-source voltage range provides flexibility in choosing gate drive voltages and improves robustness against voltage transients, making the device adaptable to a range of drive circuits and operating conditions.

What considerations are necessary for PCB layout with this device?

Its SuperSO8 package supports dense designs, but designers should ensure adequate copper area for heat dissipation and carefully route gate and drain connections to minimize parasitic inductance and optimize switching performance.

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